1. Açık Erişim@BUU
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Please use this identifier to cite or link to this item: http://hdl.handle.net/11452/21487
Title: Excess noise factor of neutron-irradiated silicon avalanche photodiodes
Authors: Uludağ Üniversitesi/Fen-Edebiyat Fakültesi/Fizik Bölümü.
0000-0002-4756-9988
Piliçer, Ercan
Kocak, Fatma
Tapan, İlhan
15843878300
15843834900
8905787000
Keywords: Monte Carlo simulation
Radiation damage
Avalanche photodiodes
Excess noise
Wavelength dependence
Radiation-Damage
Simulation
Gaas
Apd
Instruments & instrumentation
Nuclear Science & Technology
Physics
Avalanche diodes
Gain control
Monte carlo methods
Photodiodes
Radiation damage
Semiconducting silicon
Spurious signal noise
Avalanche gain
Avalanche photodiode (APD)
Excess noise
Neutron fluence
Neutron irradiation
Issue Date: 21-Oct-2005
Publisher: Elsevier
Citation: Piliçer, E. vd. (2005). “Excess noise factor of neutron-irradiated silicon avalanche photodiodes”. Nuclear Instruments & Methods in Physıcs Research Section A-Accelerators Spectrometers Detectors And Associated Equipment, 552(1-2), 146-151.
Abstract: A Monte Carlo simulation code has been developed in order to analyse avalanche gain and excess noise factor variation of the well-defined silicon avalanche photodiode (APD) geometry as a function of the neutron fluences up to 2 x 10(13) neutrons/cm(2). The results show that the neutron fluence has an influence on the excess noise factor for the same mean avalanche gain for the PbWO4 light. (c) 2005 Elsevier B.V. All rights reserved.
URI: https://doi.org/10.1016/j.nima.2005.06.021
https://www.sciencedirect.com/science/article/pii/S0168900205011903
http://hdl.handle.net/11452/21487
ISSN: 0168-9002
1872-9576
Appears in Collections:Scopus
Web of Science

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