Please use this identifier to cite or link to this item: http://hdl.handle.net/11452/22017
Title: A ZnS-Si isotype heterojunction avalanche photodiode structure for scintillation light detection
Authors: Uludağ Üniversitesi/Fen Edebiyet Fakültesi/Fizik Bölümü.
0000-0002-4756-9988
Tapan, İ.
Ahmetoğlu, Afrailov M.
Koçak, F.
Keywords: Nuclear science & technology
Physics
Instruments & instrumentation
Scintillation light detection
Monte carlo simulation
Heterojunction detectors
Detector modelling
Scintillation
Quantum efficiency
Photons
Monte carlo methods
Heterojunctions
Avalanche diodes
Issue Date: 1-Nov-2006
Publisher: Elsevier
Citation: Tapan, İ. vd. (2006). ''A ZnS-Si isotype heterojunction avalanche photodiode structure for scintillation light detection''. Nuclear Instruments and Methods in Physics Research, Section A: Accelerators, Spectrometers, Detectors and Associated Equipment, 567(1), 268-271.
Abstract: We have developed a zinc sulfide-silicon (ZnS-Si) isotype heterojunction avalanche photodiode (APD) structure that has high quantum efficiency and low excess noise factor for photons of wavelength in the region from 340 to 800 nm. The dependence of quantum efficiency, mean signal and its fluctuation on incident photons wavelength are calculated in a well-defined device geometry by a Single Particle Monte Carlo simulation technique. Based on this work, we offer a new APD structure for scintillation light detection.
Description: Bu çalışma, 19-24 Haziran tarihlerinde Beaune[Fransa]'da düzenlenen 4. International Conference on New Developments in Photodetection'da bildiri olarak sunulmuştur.
URI: https://doi.org/10.1016/j.nima.2006.05.105
https://www.sciencedirect.com/science/article/pii/S0168900206009399
http://hdl.handle.net/11452/22017
ISSN: 0168-9002
1872-9576
Appears in Collections:Scopus
Web of Science

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