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Başlık: Water soluble poly(1-vinyl-1,2,4-triazole) as novel dielectric layer for organic field effect transistors
Yazarlar: Abbas, Mamatimin
Çakmak, Gülbeden
Tekin, Nalan
Güney, Hasan Yüksel
Arıcı, Elif
Sarıçiftçi, Niyazi Serdar
Uludağ Üniversitesi/Fen-Edebiyat Fakültesi/Kimya Anabilim Dalı.
Kara, Ali
AAG-6271-2019
7102824859
Anahtar kelimeler: Materials science
Physics
Polyvinyl triazole
Dielectric
Organic field effect transistor
Pentacene
C(60)
Thin-film transistors
Gate insulator
Poly-1-vinyl-1,2,4-triazole
Semiconductors
Hysteresis
Electron
Aluminum compounds
Dielectric materials
Heterojunction bipolar transistors
Leakage currents
Threshold voltage
Transistors
Device performance
High breakdown voltage
Low threshold voltage
Low-leakage current
Pentacenes
Poly (1-vinyl-1 ,2 ,4-triazole)
Polyhedral oligomeric silsesquioxanes
Polyvinyl triazole
Organic field effect transistors
Yayın Tarihi: Mar-2011
Yayıncı: Elsevier
Atıf: Abbas, M. vd. (2011). "Water soluble poly(1-vinyl-1,2,4-triazole) as novel dielectric layer for organic field effect transistors". Organic Electronics, 12(3), 497-503.
Özet: Water soluble poly(1-vinyl-1,2,4-triazole) (PVT) as a novel dielectric layer for organic field effect transistor is studied. Dielectric spectroscopy characterization reveals it has low leakage current and rather high breakdown voltage. Both n-channel and p-channel organic field effect transistors are fabricated using pentacene and fullerene as active layers. Both devices show device performances with lack of hysteresis, very low threshold voltages and high on/off ratios. Excellent film formation property is utilized to make AlO(x) and thin PVT bilayer in order to decrease the operating voltage of the devices. All solution processed ambipolar device is fabricated with simple spin coating steps using poly(2-methoxy-5-(2-ethyl-hexyloxy)-1,4-phenylenevinylene) (MEH-PPV) end capped with polyhedral oligomeric silsesquioxanes (POSS) as active layer. Our investigations show that PVT can be a very promising dielectric for organic field effect transistors.
URI: https://doi.org/10.1016/j.orgel.2010.12.023
https://www.sciencedirect.com/science/article/pii/S1566119911000061
http://hdl.handle.net/11452/23270
ISSN: 1566-1199
Koleksiyonlarda Görünür:Scopus
Web of Science

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