To the theory of electromotive force generated in potential barrier at ultrahigh frequency field

Abstract

Radio-frequency (HF) quasi-potential Φ in the field of the space charge region of contact of a metalsemiconductor is explored. At the frequency, ω, greater frequency plasma fluctuations ω0 HF quasi-potential is positive, but at frequencies ω < ω0 quasi-potential Ph is negative. VAC and Schottky barrier with provision for HF quasi-potential are calculated. It is shown that HF gives an essential contribution on EMF hot carriers when frequency of wave is less in electronic gas fluctuations in layer potential barrier.