1. Açık Erişim@BUU
  2. İndeksli Yayınlar
  3. Web of Science
Please use this identifier to cite or link to this item: http://hdl.handle.net/11452/25257
Title: Current transport in GaSb /GaInAsSb/GaAlAsSb heterojunction photodiodes
Authors: Uludağ Üniversitesi/Fen-Edebiyat Fakültesi/Fizik Bölümü.
Ahmetoğlu, Muhitdin A.
16021109400
Keywords: Broken-gap heterojunctions
Current flow mechanisms
Type ii staggered-lineup
II heterojunctions
Radiation
Lasers
Materials science
Optics
Aluminum compounds
Current voltage characteristics
Heterojunctions
III-V semiconductors
Indium compounds
Semiconducting antimony compounds
Broken gaps
Current flow mechanisms
Current transport
Diffusion mechanisms
Experimental investigations
Heterojunction photodiodes
Tunneling charges
Type II
Gallium compounds
Issue Date: Jun-2009
Publisher: Natl Inst Optoelectronics
Citation: Ahmetoğlu, M. A. vd. (2009). "Current transport in GaSb /GaInAsSb/GaAlAsSb heterojunction photodiodes". Optoelectronics and Advanced Materials, Rapid Communications, 3(6), 604-607.
Abstract: Current flow mechanisms have been studied for Liquid Phase Epitaxy (LPE) grown n-GaSb /n-GaInAsSb /p -GaAlAsSb heterostructures lattice-matched to GaSb substrates. An experimental investigation of current-voltage characteristics has been done in the temperature range from 80-300K, and have been determined the mechanism of the flow of dark current. The qualitative comparison of experimental results with theory shows that, in the high temperature region the diffusion mechanism of the current flow dominates in both, forward and reverse biases. The tunneling charge has the key role at low temperatures under both forward and reverse biases.
URI: http://hdl.handle.net/11452/25257
ISSN: 1842-6573
Appears in Collections:Scopus
Web of Science

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