DSpace JSPUI
DSpace preserves and enables easy and open access to all types of digital content including text, images, moving images, mpegs and data sets
Learn More
Please use this identifier to cite or link to this item:
http://hdl.handle.net/11452/26565| Title: | The electrical characterization of electrodeposited Ni thin film on silicon: Schottky barrier diodes |
| Authors: | Tekgül, Atakan Uludağ Üniversitesi/Fen-Edebiyat Fakültesi/Fizik Bölümü. Ahmetoğlu, Muhitdin Alper, Mürsel Kucur, Banu AAG-8795-2021 16021109400 7005719283 36903670200 |
| Keywords: | Materials science Optics Schottky diode Ni thin films Surfaces Hf Antimony compounds Capacitance Current voltage characteristics Electrodeposition Electrodes Electrolytes Gold compounds Leakage currents Nickel Nickel compounds Semiconductor diodes Silicon Silicon compounds Thin films Capacitance voltage measurements Electrical characteristic Electrical characterization Electrodeposition technique Metal semiconductor interface Schottky diodes Reverse bias leakage current Schottky barrier diodes |
| Issue Date: | 2012 |
| Publisher: | Natl Inst Optoelectronics |
| Citation: | Ahmetoğlu, M. vd. (2012). "The electrical characterization of electrodeposited Ni thin film on silicon: Schottky barrier diodes". Optoelectronics and Advanced Materials-Rapid Communications, 6(1-2), 304-306. |
| Abstract: | A Ni/n-Si Schottky barrier diode was produced by electrodeposition technique from the electrolyte containing nickel ions under galvanostatic control. The deposition was carried out in a three-electrode cell at room temperature. The electrical characteristics of the Schottky diodes have been investigated using current-voltage (l-V) and capacitance-voltage (C-V) measurements. Ni/n-Si/AuSb diode current-voltage characteristics display low reverse bias leakage currents. The barrier height and ideality factor (n) were obtained 0.60 eV and 3.28 respectively. The high ideality factor value was attributed to oxide layer at the metal semiconductor interface. |
| URI: | http://hdl.handle.net/11452/26565 |
| ISSN: | 1842-6573 2065-3824 |
| Appears in Collections: | Scopus Web of Science |
Files in This Item:
There are no files associated with this item.
Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.