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http://hdl.handle.net/11452/27328| Title: | Electrical and photoelectrical properties of isotype N+-GaSb/n(0)-GaInAsSb type II heterojunctions |
| Authors: | Uludağ Üniversitesi/Fen-Edebiyat Fakültesi/Fizik Bölümü. Afrailov, Muhitdin Ahmetoğlu 55153359100 |
| Keywords: | Instruments and Instrumentation Optics Physics Isotype structures Type II heterojunction with staggered band alignment Photo-response Dark current Doping (additives) Electric potential Energy gap Heterojunctions Light emitting diodes Photodetectors Photoelectricity Photosensitivity Gallium alloys |
| Issue Date: | May-2004 |
| Publisher: | Elsevier |
| Citation: | Afrailov, M. A. (2004). “Electrical and photoelectrical properties of isotype N+-GaSb/n(0)-GaInAsSb type II heterojunctions”. Infrared Physics and Technology, 45(3), 169-175. |
| Abstract: | Dark current voltage characteristics, spectral response and energy diagrams have been studied for LPE grown isotype heterostructures lattice-matched to GaSb substrates. The dark current mechanisms in the isotype heterostructures were investigated at several temperatures. It is shown that a type II staggered heterojunction can behave as a Schottky diode and the dark current-voltage characteristics of this isotype heterostructures were rectifying over the whole temperature range 90-300 K. The photocurrent sign dependence on photon energy has been studied as a function of forward bias. |
| URI: | https://doi.org/10.1016/j.infrared.2003.09.001 https://www.sciencedirect.com/science/article/pii/S1350449503002305 http://hdl.handle.net/11452/27328 |
| ISSN: | 1350-4495 |
| Appears in Collections: | Scopus Web of Science |
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