Please use this identifier to cite or link to this item: http://hdl.handle.net/11452/30064
Title: Irradiation response of radio-frequency sputtered Al/Gd2O3/p-Si MOS capacitors
Authors: Yılmaz, Ercan
Uludağ Üniversitesi/Fen-Edebiyet Fakültesi/Fizik Bölümü.
0000-0002-1836-7033
Kahraman, Ayşegül
AAH-6441-2021
47161190600
Keywords: Chemistry
Nuclear science & technology
Physics
Dosimetry
Gd2O3
MOS-based device
Radiation sensor
Gamma-ray irradiation
Electrical-properties
Voltage characteristics
Radiation response
Silicate-glasse
Spmos dosimeters
Oxide
Layer
Gd2o3
Metal
Aluminum
Capacitance
Capacitors
Dielectric devices
Fading (radio)
Gadolinium
Interface states
Irradiation
Magnetron sputtering
Metals
MOS devices
Oxide semiconductors
Capacitance voltage
Interface trapped charges
Metal oxide semiconductor
Oxide trapped charge
Radiation sensors
Radio frequencies
Rf-Magnetron sputtering
Significant deteriorations
MOS capacitors
Issue Date: Oct-2017
Publisher: Elsevier
Citation: Kahraman, A. ve Yılmaz, E. (2017). ''Irradiation response of radio-frequency sputtered Al/Gd2O3/p-Si MOS capacitors''. Radiation Physics and Chemistry, 139, 114-119.
Abstract: The usage of the Gadolinium oxide (Gd2O3) as sensitive region in the MOS (Metal-Oxide-Semiconductor)-based dosimeters was investigated in the presented study. The Gd2O3 films grown on p-type Si (100) by RF magnetron sputtering were annealed at 800 degrees C under N-2 ambient. The back and front metal contacts were establishes to produce MOS capacitors. The fabricated Gd2O3 MOS capacitors were irradiated in the dose range 0.5-50 Gy by Co-60 gamma source. The performed Capacitance-Voltage (C-V) curves of the Gd2O3 MOS capacitors shifted to right side relative to pre-irradiation one. While continuous increments in the oxide trapped charges with increasing in gamma dose were observed, interface trapped charges fluctuated in the studied dose range. However, the variation of the interface trapped charge densities was found in the order of 10(11) cm(-2) and no significant variation was observed with applied dose. These results confirm that a significant deterioration does not occur in the capacitance during the irradiation. The higher oxide trapped charges compared to interface trapped charges showed that these traps were more responsible for the shift of the C-V curves. The sensitivity and percentage fading after 105 min of the Gd2O3 MOS capacitor were found as 39.7 +/- 1.4 mV/Gy and similar to 14.5%, respectively. The devices sensitivity was found to be higher than that of capacitors composed of Er2O3, Sm2O3, La2O3, Al2O3, and SiO2, but, the high fading values is seen as a major problem for these capacitors. Finally, the barrier height was investigated with gamma exposure and the results showed that its value increased with increasing in radiation dose due to possible presence of the acceptor-like interface states.
URI: https://doi.org/10.1016/j.radphyschem.2017.04.003
https://www.sciencedirect.com/science/article/pii/S0969806X16307629
http://hdl.handle.net/11452/30064
ISSN: 0969-806X
Appears in Collections:Scopus
Web of Science

Files in This Item:
There are no files associated with this item.


Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.