Please use this identifier to cite or link to this item: http://hdl.handle.net/11452/33146
Title: The determination of series resistance and interface state density distributions of Au/p-type GaAs Schottky barrier diodes
Authors: Özer, Metin
Güzel, Tamer
Uludağ Üniversitesi/Fen-Edebiyat Fakültesi/Fizik Anabilim Dalı.
Asimov, A.
Ahmetoglu, Muhitdin
Kucur, Banu
55849632800
55849025200
36903670200
Keywords: Materials science
Optics
GaAs Schottky barrier
Series resistance interface state density
Parameters
Oxide
SI
Bias voltage
Capacitance
Electric resistance
Gallium arsenide
Gold compounds
III-V semiconductors
Interface states
Semiconducting gallium
Semiconductor diodes
Thermionic emission
Capacitance-voltage characteristics
Effective barrier heights
Energy distributions
Interface state density
Schottky Barrier Diode(SBD)
Schottky barrier heights
Schottky barriers
Series resistances
Schottky barrier diodes
Issue Date: 2013
Publisher: Natl Inst Optoelectronics
Citation: Asimov, A. vd. (2013). “The determination of series resistance and interface state density distributions of Au/p-type GaAs Schottky barrier diodes”. Optoelectronics and Advanced Materials- Rapid Communications, 7(7-8), 490-493.
Abstract: The electronic and interface state density distribution properties obtained from current voltage (I-V) and capacitance-voltage (C-V) characteristics of Au/p-type GaAs Schottky barrier diode (SBD) at room temperature was investigated. The (I-V)-T characteristics are analysed on the basis of thermionic emission (TE). The forward bias I-V of SBDs have been studied at room temperature. SBD parameters such as ideality factor n, series resistance (Rs) determined by Cheung's functions and Schottky barrier height, Phi(bo), are investigated as functions of temperature. The diode parameters such as ideality factor, series resistance and barrier heights were found as 1.76-2.16 and 2.2-1.8 Omega and 0.53-0.72 eV, respectively. The diode shows non-ideal I-V behaviour with an ideality factor greater than unity. Furthermore, the energy distribution of interface state density was determined from the forward bias I-V characteristics by taking into account the bias dependence of the effective barrier height. The results show the presence of thin interfacial layer between the metal and semiconductor.
URI: http://hdl.handle.net/11452/33146
ISSN: 1842-6573
2065-3824
Appears in Collections:Scopus
Web of Science

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