1. Açık Erişim@BUU
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Please use this identifier to cite or link to this item: http://hdl.handle.net/11452/22708
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dc.contributor.authorStutzmann, M.-
dc.date.accessioned2021-11-18T06:41:05Z-
dc.date.available2021-11-18T06:41:05Z-
dc.date.issued2005-
dc.identifier.citationErtürk, K. vd. (2005). "Electrical and Schottky contact properties of Pt/n-Si1-XGe/n-Si(100) heterostructure". ed. M. Stutzmann. Physica Status Solidi C - Conferences and Critical Reviews, Vol 2, No 4(Physica Status Solidi C-Current Topics in Solid State Physics), 2(4), 1428-1432.en_US
dc.identifier.issn1610-1634-
dc.identifier.urihttps://doi.org/10.1002/pssc.200460480-
dc.identifier.urihttps://onlinelibrary.wiley.com/doi/10.1002/pssc.200460480-
dc.identifier.urihttp://hdl.handle.net/11452/22708-
dc.descriptionBu çalışma, 01-04 Haziran 2005 tarihleri arasında Montpellier’de düzenlenen 7. International Workshop on Expert Evaluation and Control of Compound Semiconductor Materials and Technologies’de bildiri olarak sunulmuştur.tr_TR
dc.description.abstractWe report on n-type (100) oriented Si0.76Ge0.24 samples grown by silicon molecular beam epitaxy (Si-MBE). The grown wafer was, first, cut into small pieces. Some of these pieces were annealed under an inert gas atmosphere at 600 degrees C, 700 degrees C and 800 degrees C for 1 h to induce partial relaxation in Si1-xGex. The formation of Schottky junction was made by Pt deposition on n-Si0.76Ge0.24. The electrical properties of, both, the unannealed and annealed Pt/n-Si0.76Ge0.24/n-Si were studied by current-voltage (I-V) and capacitance-voltage (C-V) measurements. These measurements have been done under different temperatures, and Schottky barrier heights have been determined. Also, these results have been compared with Pt / n-Si.en_US
dc.language.isoenen_US
dc.publisherWiley-V C H Verlagen_US
dc.rightsinfo:eu-repo/semantics/closedAccessen_US
dc.subjectEngineeringen_US
dc.subjectMaterials scienceen_US
dc.subjectOpticsen_US
dc.subjectPhysicsen_US
dc.subjectStrain relaxationen_US
dc.subjectSI/SIGEen_US
dc.subjectLayersen_US
dc.subjectCapacitanceen_US
dc.subjectCurrent voltage characteristicsen_US
dc.subjectElectric propertiesen_US
dc.subjectMolecular beam epitaxyen_US
dc.subjectThermal effectsen_US
dc.subjectCapacitance-voltage (C-V) measurementsen_US
dc.subjectSchottky barrier heightsen_US
dc.subjectSchottky contact propertiesen_US
dc.subjectSilicon molecular beam epitaxy (Si-MBE)en_US
dc.subjectSilicon compoundsen_US
dc.titleElectrical and Schottky contact properties of Pt/n-Si1-XGe/n-Si(100) heterostructureen_US
dc.typeProceedings Paperen_US
dc.identifier.wos000228480500035tr_TR
dc.identifier.scopus2-s2.0-27344453164tr_TR
dc.relation.publicationcategoryKonferans Öğesi - Uluslararasıtr_TR
dc.contributor.departmentUludağ Üniversitesi/Fen-Edebiyat Fakültesi/Fizik Bölümü.tr_TR
dc.relation.bap2003/100tr_TR
dc.contributor.orcid0000-0002-0781-3376tr_TR
dc.identifier.startpage1428tr_TR
dc.identifier.endpage1432tr_TR
dc.identifier.volume2tr_TR
dc.identifier.issue4tr_TR
dc.relation.journalPhysica Status Solidi C - Conferences and Critical Reviews, Vol 2, No 4 (Physica Status Solidi C-Current Topics in Solid State Physics)en_US
dc.contributor.buuauthorErtürk, Kadir-
dc.contributor.buuauthorBektöre, Yüksel-
dc.contributor.buuauthorHacıismailoğlu, Muhammed Cüneyt-
dc.contributor.researcheridK-7950-2012tr_TR
dc.relation.collaborationYurtdışıtr_TR
dc.subject.wosEngineering, electrical & electronicen_US
dc.subject.wosMaterials science, multidisciplinaryen_US
dc.subject.wosOpticsen_US
dc.subject.wosPhysics, condensed matteren_US
dc.indexed.wosCPCISen_US
dc.indexed.scopusScopusen_US
dc.contributor.scopusid18036952100tr_TR
dc.contributor.scopusid8975743400tr_TR
dc.contributor.scopusid8975743500tr_TR
dc.subject.scopusSige; Dislocations (Crystals); Heterostructuresen_US
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