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Başlık: Electrical and Schottky contact properties of Pt/n-Si1-XGe/n-Si(100) heterostructure
Yazarlar: Stutzmann, M.
Uludağ Üniversitesi/Fen-Edebiyat Fakültesi/Fizik Bölümü.
0000-0002-0781-3376
Ertürk, Kadir
Bektöre, Yüksel
Hacıismailoğlu, Muhammed Cüneyt
K-7950-2012
18036952100
8975743400
8975743500
Anahtar kelimeler: Engineering
Materials science
Optics
Physics
Strain relaxation
SI/SIGE
Layers
Capacitance
Current voltage characteristics
Electric properties
Molecular beam epitaxy
Thermal effects
Capacitance-voltage (C-V) measurements
Schottky barrier heights
Schottky contact properties
Silicon molecular beam epitaxy (Si-MBE)
Silicon compounds
Yayın Tarihi: 2005
Yayıncı: Wiley-V C H Verlag
Atıf: Ertürk, K. vd. (2005). "Electrical and Schottky contact properties of Pt/n-Si1-XGe/n-Si(100) heterostructure". ed. M. Stutzmann. Physica Status Solidi C - Conferences and Critical Reviews, Vol 2, No 4(Physica Status Solidi C-Current Topics in Solid State Physics), 2(4), 1428-1432.
Özet: We report on n-type (100) oriented Si0.76Ge0.24 samples grown by silicon molecular beam epitaxy (Si-MBE). The grown wafer was, first, cut into small pieces. Some of these pieces were annealed under an inert gas atmosphere at 600 degrees C, 700 degrees C and 800 degrees C for 1 h to induce partial relaxation in Si1-xGex. The formation of Schottky junction was made by Pt deposition on n-Si0.76Ge0.24. The electrical properties of, both, the unannealed and annealed Pt/n-Si0.76Ge0.24/n-Si were studied by current-voltage (I-V) and capacitance-voltage (C-V) measurements. These measurements have been done under different temperatures, and Schottky barrier heights have been determined. Also, these results have been compared with Pt / n-Si.
Açıklama: Bu çalışma, 01-04 Haziran 2005 tarihleri arasında Montpellier’de düzenlenen 7. International Workshop on Expert Evaluation and Control of Compound Semiconductor Materials and Technologies’de bildiri olarak sunulmuştur.
URI: https://doi.org/10.1002/pssc.200460480
https://onlinelibrary.wiley.com/doi/10.1002/pssc.200460480
http://hdl.handle.net/11452/22708
ISSN: 1610-1634
Koleksiyonlarda Görünür:Scopus
Web of Science

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