1. Açık Erişim@BUU
  2. İndeksli Yayınlar
  3. Web of Science
Please use this identifier to cite or link to this item: http://hdl.handle.net/11452/24182
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dc.contributor.authorAndreev, Igor A.-
dc.contributor.authorKunitsyna, Ekaterina V.-
dc.contributor.authorMoiseev, Konstantin D.-
dc.contributor.authorMikhailova, Maya P.-
dc.contributor.authorYakovlev, Yu P.-
dc.date.accessioned2022-01-20T09:05:11Z-
dc.date.available2022-01-20T09:05:11Z-
dc.date.issued2012-01-
dc.identifier.citationAhmetoğlu, M. vd. (2012). "Electrical and optical characteristics of the InAs/InAs0.7Sb0.1P0.2 single heterojunction photodiodes for the spectral range 1.6-3.5 mu m". Infrared Physics & Technology, 55(1), 15-18.en_US
dc.identifier.issn1350-4495-
dc.identifier.issn1879-0275-
dc.identifier.urihttps://doi.org/10.1016/j.infrared.2011.07.006-
dc.identifier.urihttps://www.sciencedirect.com/science/article/pii/S1350449511000831-
dc.identifier.urihttps://www.infona.pl/resource/bwmeta1.element.elsevier-8d5ec347-ea4b-36d9-83fe-9fcdf031173d-
dc.identifier.urihttp://hdl.handle.net/11452/24182-
dc.description.abstractThe electrical end optical characteristics of InAs/InAs0.7Sb0.1P0.2 heterojunctions were studied. The dark current mechanisms in the heterostructures were investigated at several temperatures. The experimental results shows that, the low temperature region the tunneling mechanism of the current flow dominates in both, forward and reverse biases. At high temperatures region and in the range of voltage from 0.1 V to 1 V. the reverse current was defined by diffusion mechanism.en_US
dc.description.sponsorshipRussian Foundation for Basic Research (RFBR) - 07-02-01359 / 09-08-91224en_US
dc.language.isoenen_US
dc.publisherElsevieren_US
dc.rightsinfo:eu-repo/semantics/closedAccessen_US
dc.subjectInstruments & instrumentationen_US
dc.subjectOpticsen_US
dc.subjectPhysicsen_US
dc.subjectIII-V semiconductorsen_US
dc.subjectDark currentsen_US
dc.subjectSpectral sensetivityen_US
dc.subjectPhotodiode structuresen_US
dc.subjectLiquid phase epitaxy (LPE)en_US
dc.subjectPhotodetectoren_US
dc.subjectGrowthen_US
dc.subjectInasen_US
dc.subjectOptical materialsen_US
dc.subjectPhotodiodesen_US
dc.subjectCurrent flowsen_US
dc.subjectCurrent mechanismsen_US
dc.subjectDiffusion mechanismsen_US
dc.subjectHeterojunction photodiodesen_US
dc.subjectHigh temperatureen_US
dc.subjectInAsen_US
dc.subjectLiquid Phaseen_US
dc.subjectLow temperature regionsen_US
dc.subjectOptical characteristicsen_US
dc.subjectReverse biasen_US
dc.subjectReverse currentsen_US
dc.subjectSpectral rangeen_US
dc.subjectTunneling mechanismen_US
dc.subjectHeterojunctionsen_US
dc.titleElectrical and optical characteristics of the InAs/InAs0.7Sb0.1P0.2 single heterojunction photodiodes for the spectral range 1.6-3.5 mu men_US
dc.typeArticleen_US
dc.identifier.wos000300966200003tr_TR
dc.identifier.scopus2-s2.0-84655161427tr_TR
dc.relation.tubitak108T325tr_TR
dc.relation.publicationcategoryMakale - Uluslararası Hakemli Dergitr_TR
dc.contributor.departmentUludağ Üniversitesi/Fen-Edebiyat Fakültesi/Fizik Bölümü.tr_TR
dc.identifier.startpage15tr_TR
dc.identifier.endpage18tr_TR
dc.identifier.volume55tr_TR
dc.identifier.issue1tr_TR
dc.relation.journalInfrared Physics & Technologyen_US
dc.contributor.buuauthorAhmetoğlu, Muhitdin-
dc.relation.collaborationSanayitr_TR
dc.subject.wosInstruments & instrumentationen_US
dc.subject.wosOpticsen_US
dc.subject.wosPhysics, applieden_US
dc.indexed.wosSCIEen_US
dc.indexed.scopusScopusen_US
dc.wos.quartileQ2en_US
dc.wos.quartileQ3 (Physics, applied)en_US
dc.contributor.scopusid16021109400tr_TR
dc.subject.scopusSemiconductor Quantum Wells; Heterostructures; Photodiodesen_US
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