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Başlık: Electrical and optical characteristics of the InAs/InAs0.7Sb0.1P0.2 single heterojunction photodiodes for the spectral range 1.6-3.5 mu m
Yazarlar: Andreev, Igor A.
Kunitsyna, Ekaterina V.
Moiseev, Konstantin D.
Mikhailova, Maya P.
Yakovlev, Yu P.
Uludağ Üniversitesi/Fen-Edebiyat Fakültesi/Fizik Bölümü.
Ahmetoğlu, Muhitdin
16021109400
Anahtar kelimeler: Instruments & instrumentation
Optics
Physics
III-V semiconductors
Dark currents
Spectral sensetivity
Photodiode structures
Liquid phase epitaxy (LPE)
Photodetector
Growth
Inas
Optical materials
Photodiodes
Current flows
Current mechanisms
Diffusion mechanisms
Heterojunction photodiodes
High temperature
InAs
Liquid Phase
Low temperature regions
Optical characteristics
Reverse bias
Reverse currents
Spectral range
Tunneling mechanism
Heterojunctions
Yayın Tarihi: Oca-2012
Yayıncı: Elsevier
Atıf: Ahmetoğlu, M. vd. (2012). "Electrical and optical characteristics of the InAs/InAs0.7Sb0.1P0.2 single heterojunction photodiodes for the spectral range 1.6-3.5 mu m". Infrared Physics & Technology, 55(1), 15-18.
Özet: The electrical end optical characteristics of InAs/InAs0.7Sb0.1P0.2 heterojunctions were studied. The dark current mechanisms in the heterostructures were investigated at several temperatures. The experimental results shows that, the low temperature region the tunneling mechanism of the current flow dominates in both, forward and reverse biases. At high temperatures region and in the range of voltage from 0.1 V to 1 V. the reverse current was defined by diffusion mechanism.
URI: https://doi.org/10.1016/j.infrared.2011.07.006
https://www.sciencedirect.com/science/article/pii/S1350449511000831
https://www.infona.pl/resource/bwmeta1.element.elsevier-8d5ec347-ea4b-36d9-83fe-9fcdf031173d
http://hdl.handle.net/11452/24182
ISSN: 1350-4495
1879-0275
Koleksiyonlarda Görünür:Scopus
Web of Science

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