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http://hdl.handle.net/11452/24182
Başlık: | Electrical and optical characteristics of the InAs/InAs0.7Sb0.1P0.2 single heterojunction photodiodes for the spectral range 1.6-3.5 mu m |
Yazarlar: | Andreev, Igor A. Kunitsyna, Ekaterina V. Moiseev, Konstantin D. Mikhailova, Maya P. Yakovlev, Yu P. Uludağ Üniversitesi/Fen-Edebiyat Fakültesi/Fizik Bölümü. Ahmetoğlu, Muhitdin 16021109400 |
Anahtar kelimeler: | Instruments & instrumentation Optics Physics III-V semiconductors Dark currents Spectral sensetivity Photodiode structures Liquid phase epitaxy (LPE) Photodetector Growth Inas Optical materials Photodiodes Current flows Current mechanisms Diffusion mechanisms Heterojunction photodiodes High temperature InAs Liquid Phase Low temperature regions Optical characteristics Reverse bias Reverse currents Spectral range Tunneling mechanism Heterojunctions |
Yayın Tarihi: | Oca-2012 |
Yayıncı: | Elsevier |
Atıf: | Ahmetoğlu, M. vd. (2012). "Electrical and optical characteristics of the InAs/InAs0.7Sb0.1P0.2 single heterojunction photodiodes for the spectral range 1.6-3.5 mu m". Infrared Physics & Technology, 55(1), 15-18. |
Özet: | The electrical end optical characteristics of InAs/InAs0.7Sb0.1P0.2 heterojunctions were studied. The dark current mechanisms in the heterostructures were investigated at several temperatures. The experimental results shows that, the low temperature region the tunneling mechanism of the current flow dominates in both, forward and reverse biases. At high temperatures region and in the range of voltage from 0.1 V to 1 V. the reverse current was defined by diffusion mechanism. |
URI: | https://doi.org/10.1016/j.infrared.2011.07.006 https://www.sciencedirect.com/science/article/pii/S1350449511000831 https://www.infona.pl/resource/bwmeta1.element.elsevier-8d5ec347-ea4b-36d9-83fe-9fcdf031173d http://hdl.handle.net/11452/24182 |
ISSN: | 1350-4495 1879-0275 |
Koleksiyonlarda Görünür: | Scopus Web of Science |
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