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Bu öğeden alıntı yapmak, öğeye bağlanmak için bu tanımlayıcıyı kullanınız: http://hdl.handle.net/11452/24900
Başlık: Photoelectrical properties of InP-InGaAsp heterojunction avalanche photodiodes
Yazarlar: Kadirov, O.
Uludağ Üniversitesi/Fen-Edebiyat Fakültesi/Fizik Bölümü.
Ahmetoğlu, Muhitdin
Özer, Mehmet
16021109400
9742545600
Anahtar kelimeler: Heterostructures
Photoelectrical properties
The tunneling current
Photo-diodes
Photodetector
Materials science
Optics
Electric fields
Electron tunneling
Heterojunctions
III-V semiconductors
Indium phosphide
Semiconducting indium phosphide
Avalanche multiplication factor
Direct energy gaps
Effective mass
Photo-electrical properties
Reverse voltages
Temperature coefficient
Temperature range
Tunneling current
Temperature
Yayın Tarihi: Haz-2009
Yayıncı: Natl Inst Optoelectronics
Atıf: Ahmetoğlu, M. vd. (2009). "Photoelectrical properties of InP-InGaAsp heterojunction avalanche photodiodes". Optoelectronics and Advanced Materials, Rapid Communications, 3(6), 608-611.
Özet: Photoelectrical properties and the spectrum of the avalanche multiplication factor versus the reverse voltage at room temperature have been studied for LPE grown for InP-In(x)Ga(1-x)AsyP(1-y) heterostructures. The tunneling current becomes substantial at peak junction electric fields as low as 10(5) V/m due to the small direct energy gaps and small effective masses of the structures tested. The process of breakdown in the investigated structures was of the avalanche type. The results found for the lowering of the tunneling current in the pre-breakdown region. The temperature coefficient of the breakdown voltage beta = (1/V-B).(dV(B)/dT) > 0 was determined in the temperature range 77-300 K and its value was found to be beta = 5.78 x 10(-4) K-1.
URI: http://hdl.handle.net/11452/24900
ISSN: 1842-6573
Koleksiyonlarda Görünür:Scopus
Web of Science

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