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http://hdl.handle.net/11452/25128| Title: | Determination of the parameters for the back-to-back switched Schottky barrier structures |
| Authors: | Uludağ Üniversitesi/Fen-Edebiyat Fakültesi/Fizik Bölümü. Ahmetoğlu, Muhitdin Akay, Sertan Kemal R-7260-2016 15843273600 24801954600 |
| Keywords: | Metal-semiconductor-metal structures Schottky barrier Gallium arsenide Contacts Diode Semiconductors Height Gaas Materials science Physics Arsenic compounds Capacitance Gallium alloys Gallium compounds Metals Parameter estimation Photodetectors Schottky barrier diodes Semiconducting gallium Structural metals Barrier heights Capacitance voltage Capacitance voltage measurements Current voltage Gallium arsenide Metal semiconductor metal Metal-semiconductor-metal structures Radio-frequency sputtering Room temperature Schottky barrier Schottky barrier contacts Schottky barrier structures Schottky contacts Temperature range Current voltage characteristics |
| Issue Date: | Mar-2010 |
| Publisher: | Elsevier |
| Citation: | Ahmetoğlu, M. ve Akay, S. K. (2010). "Determination of the parameters for the back-to-back switched Schottky barrier structures". Current Applied Physics, 10(2), 652-654. |
| Abstract: | The Cr/n-GaAs/Cr and Ag/p-GaAs/Ag metal-semiconductor-metal (MSM) Schottky contacts have been fabricated by reactive radio frequency (RF) sputtering system. The current-voltage (I-V) and capacitance-voltage (C-V) characteristics of the devices have been investigated in the temperature range of 80-316 K for the back-to-back switched Schottky barrier contacts. These measurements establish that the room temperature barrier height determined from reverse branch of the current-voltage characteristics is close to the value obtained from capacitance-voltage measurements. |
| URI: | https://doi.org/10.1016/j.cap.2009.08.012 https://www.sciencedirect.com/science/article/pii/S1567173909003927 http://hdl.handle.net/11452/25128 |
| ISSN: | 1567-1739 1878-1675 |
| Appears in Collections: | Scopus Web of Science |
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