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Başlık: Determination of the parameters for the back-to-back switched Schottky barrier structures
Yazarlar: Uludağ Üniversitesi/Fen-Edebiyat Fakültesi/Fizik Bölümü.
Ahmetoğlu, Muhitdin
Akay, Sertan Kemal
R-7260-2016
15843273600
24801954600
Anahtar kelimeler: Metal-semiconductor-metal structures
Schottky barrier
Gallium arsenide
Contacts
Diode
Semiconductors
Height
Gaas
Materials science
Physics
Arsenic compounds
Capacitance
Gallium alloys
Gallium compounds
Metals
Parameter estimation
Photodetectors
Schottky barrier diodes
Semiconducting gallium
Structural metals
Barrier heights
Capacitance voltage
Capacitance voltage measurements
Current voltage
Gallium arsenide
Metal semiconductor metal
Metal-semiconductor-metal structures
Radio-frequency sputtering
Room temperature
Schottky barrier
Schottky barrier contacts
Schottky barrier structures
Schottky contacts
Temperature range
Current voltage characteristics
Yayın Tarihi: Mar-2010
Yayıncı: Elsevier
Atıf: Ahmetoğlu, M. ve Akay, S. K. (2010). "Determination of the parameters for the back-to-back switched Schottky barrier structures". Current Applied Physics, 10(2), 652-654.
Özet: The Cr/n-GaAs/Cr and Ag/p-GaAs/Ag metal-semiconductor-metal (MSM) Schottky contacts have been fabricated by reactive radio frequency (RF) sputtering system. The current-voltage (I-V) and capacitance-voltage (C-V) characteristics of the devices have been investigated in the temperature range of 80-316 K for the back-to-back switched Schottky barrier contacts. These measurements establish that the room temperature barrier height determined from reverse branch of the current-voltage characteristics is close to the value obtained from capacitance-voltage measurements.
URI: https://doi.org/10.1016/j.cap.2009.08.012
https://www.sciencedirect.com/science/article/pii/S1567173909003927
http://hdl.handle.net/11452/25128
ISSN: 1567-1739
1878-1675
Koleksiyonlarda Görünür:Scopus
Web of Science

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