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Başlık: Photoelectrical characteristics of the InAsSbP based uncooled photodiodes for the spectral range 1.6-3.5 μm
Yazarlar: Uludağ Üniversitesi/Fen-Edebiyat Fakültesi/Fizik Bölümü.
Afrailov, Muhitdin Ahmetoğlu
55153359100
Anahtar kelimeler: Dark currents
Photodiode structures
Avalanche multiplication
Liquid-phase epitaxy (LPE)
Growth
Instruments & instrumentation
Optics
Physics
Crystal growth
Heterojunction bipolar transistors
Heterojunctions
Liquids
Avalanche multiplication
C-V measurement
Difference frequency
Electrical characteristic
InAsSbP
Mid-infrared regions
Photodiode structures
Power-voltage
Recombination centers
Room temperature
Space charge regions
Spectral range
Temperature dependence
Temperature range
Uncooled
Wavelength ranges
Photodiodes
Yayın Tarihi: Oca-2010
Yayıncı: Elsevier
Atıf: Afrailov, M. A. (2010). "Photoelectrical characteristics of the InAsSbP based uncooled photodiodes for the spectral range 1.6-3.5 μm". Infrared Physics and Technology, 53(1), 29-32.
Özet: The electrical characteristics of photodiode structures on the base of InAS/InAsSbP heterojunctions, that have a high room temperature differential resistance and operate in the mid-infrared region over the wavelength range 1.6-3.5 mu m are reported. At the difference frequency, C-V measurements are showed that at small biases and temperatures which are higher than 160 K, the measured capacity is increase with decreasing frequency. it is possible to explain by presence the deep recombination centers in space charge region of the investigated structures. Have been studied the avalanche multiplication of the photocurrent and the temperature dependence of the monochromatic power-voltage sensitivity in the temperature range 77-300 K.
URI: https://doi.org/10.1016/j.infrared.2009.08.005
https://www.sciencedirect.com/science/article/pii/S1350449509001054
http://hdl.handle.net/11452/25371
ISSN: 1350-4495
1879-0275
Koleksiyonlarda Görünür:Scopus
Web of Science

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