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http://hdl.handle.net/11452/25371
Başlık: | Photoelectrical characteristics of the InAsSbP based uncooled photodiodes for the spectral range 1.6-3.5 μm |
Yazarlar: | Uludağ Üniversitesi/Fen-Edebiyat Fakültesi/Fizik Bölümü. Afrailov, Muhitdin Ahmetoğlu 55153359100 |
Anahtar kelimeler: | Dark currents Photodiode structures Avalanche multiplication Liquid-phase epitaxy (LPE) Growth Instruments & instrumentation Optics Physics Crystal growth Heterojunction bipolar transistors Heterojunctions Liquids Avalanche multiplication C-V measurement Difference frequency Electrical characteristic InAsSbP Mid-infrared regions Photodiode structures Power-voltage Recombination centers Room temperature Space charge regions Spectral range Temperature dependence Temperature range Uncooled Wavelength ranges Photodiodes |
Yayın Tarihi: | Oca-2010 |
Yayıncı: | Elsevier |
Atıf: | Afrailov, M. A. (2010). "Photoelectrical characteristics of the InAsSbP based uncooled photodiodes for the spectral range 1.6-3.5 μm". Infrared Physics and Technology, 53(1), 29-32. |
Özet: | The electrical characteristics of photodiode structures on the base of InAS/InAsSbP heterojunctions, that have a high room temperature differential resistance and operate in the mid-infrared region over the wavelength range 1.6-3.5 mu m are reported. At the difference frequency, C-V measurements are showed that at small biases and temperatures which are higher than 160 K, the measured capacity is increase with decreasing frequency. it is possible to explain by presence the deep recombination centers in space charge region of the investigated structures. Have been studied the avalanche multiplication of the photocurrent and the temperature dependence of the monochromatic power-voltage sensitivity in the temperature range 77-300 K. |
URI: | https://doi.org/10.1016/j.infrared.2009.08.005 https://www.sciencedirect.com/science/article/pii/S1350449509001054 http://hdl.handle.net/11452/25371 |
ISSN: | 1350-4495 1879-0275 |
Koleksiyonlarda Görünür: | Scopus Web of Science |
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