1. Açık Erişim@BUU
  2. İndeksli Yayınlar
  3. Web of Science
Bu öğeden alıntı yapmak, öğeye bağlanmak için bu tanımlayıcıyı kullanınız: http://hdl.handle.net/11452/25805
Başlık: Photoelectrical characteristics of GaSb/GaInAsSb/GaAlAsSb heterojunction photodiodes under illumination by photons with wavelength of 0.95-1.0 mu m
Yazarlar: Uludağ Üniversitesi/Fen-Edebiyat Fakültesi/Fizik Bölümü.
Afrailov, Muhitdin Ahmetoğlu
55153359100
Anahtar kelimeler: Materials science
Physics
Dark currents
Type II heterojunctions
Band alignment
Liquid phase epitaxy
Photovoltaic characteristics
III-V semiconductors
Spectral range
Heterojunctions
Light
Liquid phase epitaxy
Open circuit voltage
Photovoltaic effects
Band alignments
Heterojunction photodiodes
Incident light
Photovoltaic modes
Room temperature
Type II
Type II heterojunction
Current voltage characteristics
Yayın Tarihi: 31-May-2012
Yayıncı: Elsevier Science
Atıf: Afrailov, M. A. (2012). "Photoelectrical characteristics of GaSb/GaInAsSb/GaAlAsSb heterojunction photodiodes under illumination by photons with wavelength of 0.95-1.0 mu m". Thin Solid Films, 520(15), 5014-5017.
Özet: The photovoltaic characteristics of a type II staggered heterojunction in the GaSb/GaInAsSb/GaAlAsSb system were studied. The dark current and R(0)A product were investigated at different temperatures. The current-voltage characteristics of n-GaSb/n-GaInAsSb/p-GaAlAsSb heterostructures were investigated at room temperature in the photovoltaic mode under illumination by light with wavelength of 0.95-1.0 mu m and different intensities. A short-circuit current and an open circuit voltage as a function of intensity of incident light in photovoltaic mode were studied.
URI: https://doi.org/10.1016/j.tsf.2012.03.014
https://www.sciencedirect.com/science/article/pii/S0040609012002738
http://hdl.handle.net/11452/25805
ISSN: 0040-6090
Koleksiyonlarda Görünür:Scopus
Web of Science

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