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Başlık: Type IIGaSb based photodiodes operating in spectral range 1.5-4.8 mu m at room temperature
Yazarlar: Mikhailova, M. P.
Stoyanov, Nkolay
Andreychuk, O. V.
Moiseev, K. D.
Andreev, Igor
Yakovlev, Yu P.
Uludağ Üniversitesi.
Afrailov, M. Ahmetoğlu
55153359100
Anahtar kelimeler: Emission
Engineering
Optics
Telecommunications
Energy gap
Thermodynamic equilibrium
Photodiodes
Band bending
Band energy diagram
Barrier heights
Capacitance voltage characteristics
Carrier separation
Hole concentration
Long wavelength photodiodes
Photoelectrical parameters
Spectral response
Semiconductor growth
Heterojunctions
Interfaces (materials)
Lattice constants
Liquid phase epitaxy
Ohmic contacts
Semiconducting antimony compounds
Semiconducting indium compounds
Semiconductor device manufacture
Solid solutions
Substrates
Yayın Tarihi: Şub-2002
Yayıncı: IEEE
Atıf: Mikhailova, M. P. (2002). "Type IIGaSb based photodiodes operating in spectral range 1.5-4.8 mu m at room temperature". IEEE Proceedings Optoelectronics, 149(1), 41-44.
Özet: The authors present results of research and development of mid-infrared photodiodes based on antimonide solid solutions operating at room temperature in the spectral range of 1.5-4.8 mum. A new physical approach to the design of long-wavelength photodiodes is proposed by using type II broken-gap heterostructures grown by liquid-phase epitaxy on GaSb substrates. The choice of sequence of the narrow-gap and wide-gap layers in the GaSb/InGaAsSb/GaInAsSb and GaSb/InGaAsSb/AlGaAsSb heterostructures allows one to vary the band energy diagram and barrier heights on the interface. Electrical and photoelectrical parameters of three kinds of devices were studied. A detectivity of D-lambda* = 4.1 x 10(8) cm Hz(1/2)/W was found at lambda = 4.7 mum, T = 300 K.
URI: https://doi.org/10.1049/ip-opt:20020348
https://digital-library.theiet.org/content/journals/10.1049/ip-opt_20020348
http://hdl.handle.net/11452/28713
ISSN: 1350-2433
Koleksiyonlarda Görünür:Scopus
Web of Science

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