1. Açık Erişim@BUU
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Please use this identifier to cite or link to this item: http://hdl.handle.net/11452/28854
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dc.date.accessioned2022-09-27T12:25:36Z-
dc.date.available2022-09-27T12:25:36Z-
dc.date.issued2011-11-01-
dc.identifier.citationKılıç, A. vd. (2011). "Simulation of displacement damage for silicon avalanche photo-diodes". Nuclear Instruments & Methods in Physics Research Section A-Accelerators Spectrometers Detectors and Associated Equipment, 658(1), 70-72.en_US
dc.identifier.issn0168-9002-
dc.identifier.issn1872-9576-
dc.identifier.urihttps://doi.org/10.1016/j.nima.2011.05.073-
dc.identifier.urihttps://www.sciencedirect.com/science/article/pii/S0168900211010801-
dc.identifier.urihttp://hdl.handle.net/11452/28854-
dc.descriptionBu çalışma, 12-15 Ekim 2010 tarihleri arasında Florence[İtalya]’da düzenlenen International Conference on Radiation Effects on Semiconductor Materials, Detectors and Devices (RESMDD)’da bildiri olarak sunulmuştur.tr_TR
dc.description.abstractThe silicon avalanche photo-diodes (APDs) in the CMS barrel electromagnetic calorimeter will be exposed to an integrated neutron fluence of about 2 x 10(13) n/cm(2) over 10 years of operation. High neutron fluences change the electrical properties of silicon detectors. The changes are proportional to the non-ionising energy loss in the APDs. Using the Geant4 toolkit, we have calculated the non-ionising energy loss as well as the rate of generation of primary defects in the APDs, for the expected neutron fluence.en_US
dc.language.isoenen_US
dc.publisherElsevieren_US
dc.rightsinfo:eu-repo/semantics/openAccessen_US
dc.rightsAtıf Gayri Ticari Türetilemez 4.0 Uluslararasıtr_TR
dc.rights.urihttp://creativecommons.org/licenses/by-nc-nd/4.0/*
dc.subjectInstruments & instrumentationen_US
dc.subjectNuclear science & technologyen_US
dc.subjectPhysicsen_US
dc.subjectRadiation damageen_US
dc.subjectAvalanche photo-diodeen_US
dc.subjectGeant4 simulationen_US
dc.subjectPhotodiodesen_US
dc.subjectDetectorsen_US
dc.subjectNielen_US
dc.subjectDiodesen_US
dc.subjectElectric propertiesen_US
dc.subjectElectron energy loss spectroscopyen_US
dc.subjectEnergy dissipationen_US
dc.subjectHigh energy physicsen_US
dc.subjectNeutronsen_US
dc.subjectRadiation damageen_US
dc.subjectRadiation detectorsen_US
dc.subjectSemiconducting silicon compoundsen_US
dc.subjectSilicon detectorsen_US
dc.subjectBarrel electromagnetic calorimetersen_US
dc.subjectDisplacement damagesen_US
dc.subjectEnergy lossen_US
dc.subjectGEANT4 simulationen_US
dc.subjectGeant4 toolkitsen_US
dc.subjectNeutron fluencesen_US
dc.subjectSilicon avalancheen_US
dc.subjectAvalanche diodesen_US
dc.titleSimulation of displacement damage for silicon avalanche photo-diodesen_US
dc.typeArticleen_US
dc.typeProceedings Paperen_US
dc.identifier.wos000297783300016tr_TR
dc.identifier.scopus2-s2.0-80255123290tr_TR
dc.relation.publicationcategoryKonferans Öğesi - Uluslararasıtr_TR
dc.contributor.departmentUludağ Üniversitesi/Fen-Edebiyat Fakültesi/Fizik Anabilim Dalı.tr_TR
dc.identifier.startpage70tr_TR
dc.identifier.endpage72tr_TR
dc.identifier.volume658tr_TR
dc.identifier.issue1tr_TR
dc.relation.journalNuclear Instruments & Methods in Physics Research Section A-Accelerators Spectrometers Detectors and Associated Equipmenten_US
dc.contributor.buuauthorKılıç, Adnan-
dc.contributor.buuauthorPiliçer, Ercan-
dc.contributor.buuauthorTapan, İlhan-
dc.contributor.buuauthorÖzmutlu, Emin N.-
dc.contributor.researcheridAAH-8769-2021tr_TR
dc.subject.wosInstruments & instrumentationen_US
dc.subject.wosNuclear science & technologyen_US
dc.subject.wosPhysics, nuclearen_US
dc.subject.wosPhysics, particles & fieldsen_US
dc.indexed.wosSCIEen_US
dc.indexed.scopusScopusen_US
dc.wos.quartileQ2en_US
dc.contributor.scopusid57210230921tr_TR
dc.contributor.scopusid15843878300tr_TR
dc.contributor.scopusid54396260200tr_TR
dc.contributor.scopusid6507726213tr_TR
dc.subject.scopusHeavy Ions; Fluence; Trappingen_US
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