1. Açık Erişim@BUU
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Bu öğeden alıntı yapmak, öğeye bağlanmak için bu tanımlayıcıyı kullanınız: http://hdl.handle.net/11452/30326
Başlık: Thermally evaporated FeMGaMnSi (M=Co, Ni) high entropy alloy thin films: Magnetic and magnetoresistance properties
Yazarlar: Bursa Uludağ Üniversitesi/Fen-Edebiyat Fakültesi/Fizik Bölümü.
0000-0002-0781-3376
0000-0002-8871-2357
0000-0001-6737-3838
Hacıismailoğlu, M. Cüneyt
Şarlar, Kağan
Tekgül, Atakan
Küçük, İlker
FJG-9926-2022
8975743500
55550817200
37462175100
6602910810
Anahtar kelimeler: Materials science
High entropy alloys (HEA)
Magnetic anisotropy, amorphous thin films
Magnetoresistance, electrical resistivity
Bulk metallic glasses
Optical-properties
Cobalt
Entropy
High-entropy alloys
Magnetoresistance
Nickel alloys
Saturation magnetization
Silicon
Thermal evaporation
Amorphous structures
Annealing process
Applied field
Effects of CO
High-saturation magnetization
Magnetoresistance properties
Profilometers
Thermal evaporation method
Thin films
Yayın Tarihi: 23-Mar-2020
Yayıncı: Elsevier
Atıf: Hacıismailoğlu, M. C. vd. (2020). "Thermally evaporated FeMGaMnSi (M=Co, Ni) high entropy alloy thin films: Magnetic and magnetoresistance properties". Journal of Non-Crystalline Solids, 539.
Özet: Fe26.7M26.7Ga15.6Mn20Si11 (M=Co, Ni) high entropy alloy (HEA) thin films were prepared using a thermal evaporation method. The structural, magnetic, electrical and magnetoresistance properties of FeMGaMnSi amorphous HEA thin films were investigated to determine the effects of Co and Ni substitution and annealing. The amorphous structure of Fe26.7Co26.7Ga15.6Mn20Si11 and Fe26.7Ni26.7Ga15.6Mn20Si11 HEA thin films was confirmed by the XRD patterns. The HEA thin film thicknesses were measured to be 82.3 nm using an optic profilometer. The HEA with Co content relatively exhibits high saturation magnetization (1538 emu/cm(3)) value at room temperature. The electrical resistivity (rho) of the Fe26.7Ni26.7Ga15.6Mn20Si11 increases from 48 to 425 mu Omega cm with the annealing process at room temperature. The best magnetoresistance (MR) was obtained to be 105% at 300 K under an applied field of 1 T for the Fe26.7Ni26.7Ga15.6Mn20Si11 HEA thin film.
URI: https://doi.org/10.1016/j.jnoncrysol.2020.120063
https://www.sciencedirect.com/science/article/pii/S0022309320301800
http://hdl.handle.net/11452/30326
ISSN: 0022-3093
1873-4812
Koleksiyonlarda Görünür:Scopus
Web of Science

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