Please use this identifier to cite or link to this item: http://hdl.handle.net/11452/30349
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dc.date.accessioned2023-01-10T08:32:39Z-
dc.date.available2023-01-10T08:32:39Z-
dc.date.issued2017-04-02-
dc.identifier.citationYıldırım, H. ve Peksöz, A. (2017). ''Characterization of non-vacuum CuInxGa1 − xSe2 thin films prepared by low-cost sequential electrodeposition technique''. Thin Solid Films, 631, 34-40.en_US
dc.identifier.issn0040-6090-
dc.identifier.urihttps://doi.org/10.1016/j.tsf.2017.04.001-
dc.identifier.urihttps://www.sciencedirect.com/science/article/pii/S0040609017302560-
dc.identifier.urihttp://hdl.handle.net/11452/30349-
dc.description.abstractCopper indium gallium diselenide (CuInxGa1 - Se-x(2)) thin films were grown on indiumtin oxide coated glass substrate by a sequential electrodeposition technique. The deposition bath consisted of an aqueous solution of 10 mM CuCl2, 10 mM InCl3, 20 mM GaCl3, 20 mM H2SeO3 as precursors, and 200 mM LiCl. The pH of the solution was adjusted to 1.7 by adding HCl. Cu, In, Cu, Ga, Cu, Se components were deposited sequentially. Cu/In/Cu/Ga/Cu/Se stacked layers were annealed at 250, 350, 450 and 550 degrees C for 30 min. X-ray diffraction (XRD) studies showed the produced CIGS thin films had polycrystalline structure. From scanning electron microscopy studies, it was found that CIGS thin films exhibited different surface appearances depending on annealing temperature. Energy dispersive x-rays analysis showed that elemental ratio of Se decreased from 46.99 to 14.84 (%) with increasing of annealing temperature. Optical band gap of the CIGS films varied between 1.41 and 2.19 eV. Thicknesses and refractive indices of the produced CIGS thin films were calculated by fitting spectroscopic ellipsometric data (psi and triangle) by using Cauchy model. Deposited CIGS thin films were p-type semiconductor with carrier concentration of -10(16) cm(-3).en_US
dc.language.isoenen_US
dc.publisherElsevieren_US
dc.rightsinfo:eu-repo/semantics/closedAccessen_US
dc.subjectMaterials scienceen_US
dc.subjectPhysicsen_US
dc.subjectCuInxGa1 − xSe2 thin filmen_US
dc.subjectElectrodepositionen_US
dc.subjectP-type semiconductoren_US
dc.subjectSolar cellen_US
dc.subjectCuin1-xga(x)se-2-based photovoltaic cellsen_US
dc.subjectPrecursor filmsen_US
dc.subjectSolar-cellsen_US
dc.subjectOptical-propertiesen_US
dc.subjectCigs filmsen_US
dc.subjectSelenizationen_US
dc.subjectLayersen_US
dc.subjectAnnealingen_US
dc.subjectCarrier concentrationen_US
dc.subjectChlorine compoundsen_US
dc.subjectCopper compoundsen_US
dc.subjectElectrodepositionen_US
dc.subjectElectrodesen_US
dc.subjectEnergy gapen_US
dc.subjectGallium compoundsen_US
dc.subjectIndium compoundsen_US
dc.subjectITO glassen_US
dc.subjectLithium compoundsen_US
dc.subjectRefractive indexen_US
dc.subjectScanning electron microscopyen_US
dc.subjectSeleniumen_US
dc.subjectSelenium compoundsen_US
dc.subjectSolar cellsen_US
dc.subjectSolutionsen_US
dc.subjectSubstratesen_US
dc.subjectTin oxidesen_US
dc.subjectX ray diffractionen_US
dc.subjectAnnealing temperaturesen_US
dc.subjectCopper indium gallium diselenideen_US
dc.subjectElectrodeposition techniqueen_US
dc.subjectEllipsometric dataen_US
dc.subjectEnergy dispersive x-rayen_US
dc.subjectIndium tin oxide coated glassen_US
dc.subjectP type semiconductoren_US
dc.subjectPolycrystalline structureen_US
dc.subjectThin filmsen_US
dc.titleCharacterization of non-vacuum CuInxGa1 − xSe2 thin films prepared by low-cost sequential electrodeposition techniqueen_US
dc.typeArticleen_US
dc.identifier.wos000401082400005tr_TR
dc.identifier.scopus2-s2.0-85017175811tr_TR
dc.relation.publicationcategoryMakale - Uluslararası Hakemli Dergitr_TR
dc.contributor.departmentUludağ Üniversitesi/Fen-Edebiyat Fakültesi/Fizik Bölümü.tr_TR
dc.relation.bapKUAP(F)-2015/63en_US
dc.contributor.orcid0000-0001-6552-1112tr_TR
dc.identifier.startpage34tr_TR
dc.identifier.endpage40tr_TR
dc.identifier.volume631tr_TR
dc.relation.journalThin Solid Filmsen_US
dc.contributor.buuauthorYıldırım, Hasan-
dc.contributor.buuauthorPeksöz, Ahmet-
dc.contributor.researcheridA-8113-2016tr_TR
dc.contributor.researcheridAAG-9772-2021tr_TR
dc.subject.wosMaterials science, multidisciplinaryen_US
dc.subject.wosMaterials science, coatings & filmsen_US
dc.subject.wosPhysics, applieden_US
dc.subject.wosPhysics, condensed matteren_US
dc.indexed.wosSCIEen_US
dc.indexed.scopusScopusen_US
dc.wos.quartileQ2en_US
dc.wos.quartileQ3en_US
dc.contributor.scopusid57222249173tr_TR
dc.contributor.scopusid23100976500tr_TR
dc.subject.scopusThin Film Solar Cells; Copper; Chalcopyriteen_US
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