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Başlık: Characterization of non-vacuum CuInxGa1 − xSe2 thin films prepared by low-cost sequential electrodeposition technique
Yazarlar: Uludağ Üniversitesi/Fen-Edebiyat Fakültesi/Fizik Bölümü.
0000-0001-6552-1112
Yıldırım, Hasan
Peksöz, Ahmet
A-8113-2016
AAG-9772-2021
57222249173
23100976500
Anahtar kelimeler: Materials science
Physics
CuInxGa1 − xSe2 thin film
Electrodeposition
P-type semiconductor
Solar cell
Cuin1-xga(x)se-2-based photovoltaic cells
Precursor films
Solar-cells
Optical-properties
Cigs films
Selenization
Layers
Annealing
Carrier concentration
Chlorine compounds
Copper compounds
Electrodeposition
Electrodes
Energy gap
Gallium compounds
Indium compounds
ITO glass
Lithium compounds
Refractive index
Scanning electron microscopy
Selenium
Selenium compounds
Solar cells
Solutions
Substrates
Tin oxides
X ray diffraction
Annealing temperatures
Copper indium gallium diselenide
Electrodeposition technique
Ellipsometric data
Energy dispersive x-ray
Indium tin oxide coated glass
P type semiconductor
Polycrystalline structure
Thin films
Yayın Tarihi: 2-Nis-2017
Yayıncı: Elsevier
Atıf: Yıldırım, H. ve Peksöz, A. (2017). ''Characterization of non-vacuum CuInxGa1 − xSe2 thin films prepared by low-cost sequential electrodeposition technique''. Thin Solid Films, 631, 34-40.
Özet: Copper indium gallium diselenide (CuInxGa1 - Se-x(2)) thin films were grown on indiumtin oxide coated glass substrate by a sequential electrodeposition technique. The deposition bath consisted of an aqueous solution of 10 mM CuCl2, 10 mM InCl3, 20 mM GaCl3, 20 mM H2SeO3 as precursors, and 200 mM LiCl. The pH of the solution was adjusted to 1.7 by adding HCl. Cu, In, Cu, Ga, Cu, Se components were deposited sequentially. Cu/In/Cu/Ga/Cu/Se stacked layers were annealed at 250, 350, 450 and 550 degrees C for 30 min. X-ray diffraction (XRD) studies showed the produced CIGS thin films had polycrystalline structure. From scanning electron microscopy studies, it was found that CIGS thin films exhibited different surface appearances depending on annealing temperature. Energy dispersive x-rays analysis showed that elemental ratio of Se decreased from 46.99 to 14.84 (%) with increasing of annealing temperature. Optical band gap of the CIGS films varied between 1.41 and 2.19 eV. Thicknesses and refractive indices of the produced CIGS thin films were calculated by fitting spectroscopic ellipsometric data (psi and triangle) by using Cauchy model. Deposited CIGS thin films were p-type semiconductor with carrier concentration of -10(16) cm(-3).
URI: https://doi.org/10.1016/j.tsf.2017.04.001
https://www.sciencedirect.com/science/article/pii/S0040609017302560
http://hdl.handle.net/11452/30349
ISSN: 0040-6090
Koleksiyonlarda Görünür:Scopus
Web of Science

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