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Başlık: Proposal of alternative sensitive region for MOS based radiation sensors: Yb2O3
Yazarlar: Yılmaz, Ercan
Uludağ Üniversitesi/Fen-Edebiyat Fakültesi/Fizik Bölümü.
0000-0002-1836-7033
Kahraman, Ayşegül
AAH-6441-2021
47161190600
Anahtar kelimeler: Materials science
Physics
Gamma-ray irradiation
Pmos dosimeters
Electrical-properties
Frequency
Films
Capacitors
Responses
Layer
Bias
Amorphous films
Amorphous silicon
Capacitance
Fading (radio)
Hafnium oxides
Lanthanum compounds
Magnetron sputtering
Metals
MOS devices
Ohmic contacts
Oxide semiconductors
Radiation shielding
Samarium compounds
Silica
Capacitance voltage measurements
Flat-band voltage shift
Interface trap charge
Metal oxide semiconductor
Radioactive sources
Oxide trap charge
Radiation sensors
Radio frequency magnetron sputtering
Ytterbium compounds
Yayın Tarihi: 10-Eki-2017
Yayıncı: A. V. S. Amer Inst Physics
Atıf: Kahraman, A. ve Yılmaz, E. (2017). ''Proposal of alternative sensitive region for MOS based radiation sensors: Yb2O3''. Journal of Vacuum Science and Technology A, 35(6).
Özet: The purpose of this study is to investigate the usability of ytterbium oxide (Yb2O3) as a sensitive region/gate oxide in metal oxide semiconductor (MOS) based dosimeters and to determine the advantages and disadvantages of this device relative to its alternatives. For this purpose, amorphous Yb2O3 films were grown on p type Si by radio-frequency magnetron sputtering and aluminum (Al) was used as front and back ohmic contacts of the capacitor. Yb2O3 MOS devices were irradiated incrementally to the total dose of 70 Gy by Co-60 radioactive source. The capacitance-voltage measurements were performed at low (100 kHz) and high (1 MHz) frequencies to examine the behavior of the traps. The sensitivity of the device for 70 Gy was obtained using flat band voltage shifts as 27.5 +/- 1.1 and 28.1 +/- 1.3 mV/Gy for 100 kHz and 1 MHz, respectively. The changes in the oxide trap charge densities in the studied dose between 0.5 and 70 Gy are in the ranges of (1.09 +/- 0.04) x 10(11)-(1.23 +/- 0.05) x 10(12) cm(-2) for 100 kHz and (-3.26 +/- 0.08) x 10(10)-(8.16 +/- 0.35) x 10(11) cm(-2) for 1 MHz. For both frequencies, there was no significant change in the interface trap charge densities over the applied dose and the density of these traps remained in order of 10(11) cm(-2) after each applied dose. The percentage fading were measured at only 1 MHz for evaluation of the device's dose storage capacity and the results varied from 4% (5 min) to -19% (50 min). An almost constant fading value was obtained after 20 min from irradiation. The capacitor's sensitivity was found to be higher than those of similar devices composed of HfO2, La2O3, SiO2, Sm2O3, and Y2O3. Yb2O3 would be a promising candidate for a new generation of MOS based radiation sensors.
URI: https://doi.org/10.1116/1.4993545
https://avs.scitation.org/doi/10.1116/1.4993545
1520-8559
http://hdl.handle.net/11452/30974
ISSN: 0734-2101
Koleksiyonlarda Görünür:Scopus
Web of Science

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