Please use this identifier to cite or link to this item: http://hdl.handle.net/11452/32193
Title: Poly(ethylene glycol dimethacrylate-co-1-vinyl-1,2,4-triazole/ carbon nanotube, single-walled)/n-GaAs Diode Formed by Surface Polymerization
Authors: Uludağ Üniversitesi/Fen-Edebiyat Fakültesi/Fizik Bölümü.
Uludağ Üniversitesi/Fen-Edebiyat Fakültesi/Kimya Bölümü.
0000-0003-2457-6314
Ahmetoğlu, Muhitdin A.
Kara, Ali
Kucur, Banu
AAG-6271-2019
16021109400
7102824859
36903670200
Keywords: Physics
Capacitance-voltage characteristics
Schottky-barrier diode
Electrical-properties
Ethylene
Nanotubes
Polymerization
Polyols
Yarn
Current mechanisms
Current-voltage measurements
Electronic device
Ethylene glycol dimethacrylate
Fabricated structures
Single-walled
Surface polymerization
Ethylene glycol
Issue Date: Jul-2016
Publisher: Polish Acad Sciences Inst Physics
Citation: Ahmetoğlu, M. vd. (2016). "Poly(ethylene glycol dimethacrylate-co-1-vinyl-1,2,4-triazole/ carbon nanotube, single-walled)/n-GaAs Diode Formed by Surface Polymerization". Acta Physica Polonica A, 130(1), 206-208.
Abstract: Poly(ethylene glycol dimethacrylate-co-1-vinyl-1,2,4-triazole/carbon nanotube, single-walled)/n-GaAs ([P(EGDMA-VTAZ)-CNSW]/n-GaAs) diode was fabricated by using surface polymerization method. Electrical properties were carried out at several temperatures. Dark current mechanisms were investigated by using current-voltage (I-V) measurements. It was shown that the fabricated structure exhibited rectification behaviour that makes it a good candidate for electronic device applications.
Description: Bu çalışma, 14-19 Ekim 2015 tarihlerinde Kemer[Türkiye]’düzenlenen 2. International Conference on Computational and Experimental Science and Engineering (ICCESEN) Kongresi‘nde bildiri olarak sunulmuştur.
URI: https://doi.org/10.12693/APhysPolA.130.206
http://przyrbwn.icm.edu.pl/APP/PDF/130/a130z1p053.pdf
http://hdl.handle.net/11452/32193
ISSN: 0587-4246
1898-794X
Appears in Collections:Scopus
Web of Science

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