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http://hdl.handle.net/11452/32193
Başlık: | Poly(ethylene glycol dimethacrylate-co-1-vinyl-1,2,4-triazole/ carbon nanotube, single-walled)/n-GaAs Diode Formed by Surface Polymerization |
Yazarlar: | Uludağ Üniversitesi/Fen-Edebiyat Fakültesi/Fizik Bölümü. Uludağ Üniversitesi/Fen-Edebiyat Fakültesi/Kimya Bölümü. 0000-0003-2457-6314 Ahmetoğlu, Muhitdin A. Kara, Ali Kucur, Banu AAG-6271-2019 16021109400 7102824859 36903670200 |
Anahtar kelimeler: | Physics Capacitance-voltage characteristics Schottky-barrier diode Electrical-properties Ethylene Nanotubes Polymerization Polyols Yarn Current mechanisms Current-voltage measurements Electronic device Ethylene glycol dimethacrylate Fabricated structures Single-walled Surface polymerization Ethylene glycol |
Yayın Tarihi: | Tem-2016 |
Yayıncı: | Polish Acad Sciences Inst Physics |
Atıf: | Ahmetoğlu, M. vd. (2016). "Poly(ethylene glycol dimethacrylate-co-1-vinyl-1,2,4-triazole/ carbon nanotube, single-walled)/n-GaAs Diode Formed by Surface Polymerization". Acta Physica Polonica A, 130(1), 206-208. |
Özet: | Poly(ethylene glycol dimethacrylate-co-1-vinyl-1,2,4-triazole/carbon nanotube, single-walled)/n-GaAs ([P(EGDMA-VTAZ)-CNSW]/n-GaAs) diode was fabricated by using surface polymerization method. Electrical properties were carried out at several temperatures. Dark current mechanisms were investigated by using current-voltage (I-V) measurements. It was shown that the fabricated structure exhibited rectification behaviour that makes it a good candidate for electronic device applications. |
Açıklama: | Bu çalışma, 14-19 Ekim 2015 tarihlerinde Kemer[Türkiye]’düzenlenen 2. International Conference on Computational and Experimental Science and Engineering (ICCESEN) Kongresi‘nde bildiri olarak sunulmuştur. |
URI: | https://doi.org/10.12693/APhysPolA.130.206 http://przyrbwn.icm.edu.pl/APP/PDF/130/a130z1p053.pdf http://hdl.handle.net/11452/32193 |
ISSN: | 0587-4246 1898-794X |
Koleksiyonlarda Görünür: | Scopus Web of Science |
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Ahmetoglu_vd_2016.pdf | 436.77 kB | Adobe PDF | Göster/Aç |
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