1. Açık Erişim@BUU
  2. İndeksli Yayınlar
  3. Web of Science
Please use this identifier to cite or link to this item: http://hdl.handle.net/11452/33266
Title: The electrical properties of Au/MEH-PPV:PCBM/n-type GaAs Schottky barrier diode
Authors: Uludağ Üniversitesi/Fen-Edebiyat Fakültesi/Fizik Bölümü.
Ahmetoglu (Afrailov), Muhitdin
Kırsoy, Ahmet
Asimov, A.
Kucur, Banu
CBY-1915-2022
CCC-9142-2022
FDX-3050-2022
CZA-5782-2022
55849025200
56716481600
55849632800
36903670200
Keywords: Materials science
Optics
Schottky barrier diode
Series resistance
Ideality factor
Conducting polymers
State density distributions
Electronic parameters
V characteristics
Current-voltage
C-V
Interface states
I-V
Mechanism
PPV
Capacitance
Electric resistance
Gallium arsenide
Gold compounds
III-V semiconductors
Interface states
Semiconducting gallium
Semiconductor diodes
Capacitance-voltage characteristics
Energy distributions
Ideality factors
Interfacial layer
IV characteristics
Schottky barrier diodes (SBDs)
Semiconductor layers
Series resistances
Schottky barrier diodes
Issue Date: 25-Nov-2016
Publisher: National Institute of Optoelectronics
Citation: Ahmetoğlu (Afrailov), M. vd. (2016). "The electrical properties of Au/MEH-PPV:PCBM/n-type GaAs Schottky barrier diode". Optoelectronics and Advanced Materials, Rapid Communications, 10(11-12), 825-830.
Abstract: We fabricated the Au/Meh-PPV:PCBM/n-type GaAs Schottky barrier diodes (SBDs). Then we investigated Current-voltage (I-V) and capacitance-voltage (C-V) characteristics of the diode at room temperature. MEH-PPV:PCBM (in a mass ratio 1:4) used as interfacial layer between metal and semiconductor layers. Here, MEH-PPV is poly [2-methoxy-5-(ethylhexyloxy)1,4-phenylenevinylene] and PCBM is [6,6]-phenyl-61C-butric acid methyl ester). SBD parameters such as ideality factor, barrier height and series resistance were obtained from I-V and C-V measurements. Also, Cheung functions and Norde Method were used to evaluate the I-V characteristics and to determine the characteristic parameters of the Schottky diode. The diode parameters such as ideality factor, barrier heights and series resistance were found as 4.39-4.54 and 0.57-0.63 eV and 51-53 Omega respectively. Also the interface states energy distribution of the diode was determined and found as 1.09 x 10(12) ev(-1)cm(-2)at (Ec-0.352) eV to 2.94 x 10(11) eV(-1)crn(-2) at (Ec-0.436) eV.
URI: http://hdl.handle.net/11452/33266
ISSN: 1842-6573
2065-3824
Appears in Collections:Scopus
Web of Science

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