1. Açık Erişim@BUU
  2. İndeksli Yayınlar
  3. Web of Science
Please use this identifier to cite or link to this item: http://hdl.handle.net/11452/33275
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dc.contributor.authorYasin, M.-
dc.date.accessioned2023-07-26T09:18:15Z-
dc.date.available2023-07-26T09:18:15Z-
dc.date.issued2016-
dc.identifier.citationAsimov, A. vd. (2016). "The electrical properties of Au/P3HT/n-type Si schottky barrier diode". Journal of Nanoelectronics and Optoelectronics, 11(2), 214-218.en_US
dc.identifier.issn1555-130X-
dc.identifier.issn1555-1318-
dc.identifier.urihttps://doi.org/10.1166/jno.2016.1881-
dc.identifier.urihttp://hdl.handle.net/11452/33275-
dc.description.abstractWe investigated the electrical properties of the Au/P3HT/n-Si Schottky diode. The ideality factor n and barrier height Phi(b0) values of the diode were found to be 3.40 and Phi(b0) = 0.71 eV, respectively. n ideality factor greater than unity indicates that the diode exhibits non-ideal current voltage behavior. This behavior results from the effect of series resistance and the presence of an interfacial layer. The values of the ideality factor, series resistance and barrier height obtained from Cheung and Norde method were compared, and it was seen that there was an agreement with each other. We obtained that the high frequency capacitance does not make an important contribution to the total capacitance. Also we have been determined barrier heights increasing with increasing frequency.en_US
dc.language.isoenen_US
dc.publisherAmerican Scientific Publishersen_US
dc.rightsinfo:eu-repo/semantics/closedAccessen_US
dc.subjectEngineeringen_US
dc.subjectScience & technology - other topicsen_US
dc.subjectPhysicsen_US
dc.subjectSchottky barrier diodeen_US
dc.subjectConducting polymersen_US
dc.subjectIdeality factoren_US
dc.subjectP3HTen_US
dc.subjectSeries resistanceen_US
dc.subjectInterface statesen_US
dc.subjectDegradationen_US
dc.subjectParametersen_US
dc.subjectFrequencyen_US
dc.subjectCapacitanceen_US
dc.subjectDiodesen_US
dc.subjectElectric resistanceen_US
dc.subjectBarrier heightsen_US
dc.subjectCurrent voltageen_US
dc.subjectHigh frequency capacitanceen_US
dc.subjectIdeality factorsen_US
dc.subjectInterfacial layeren_US
dc.subjectSchottky diodesen_US
dc.subjectSeries resistancesen_US
dc.subjectSchottky barrier diodesen_US
dc.titleThe electrical properties of Au/P3HT/n-type Si schottky barrier diodeen_US
dc.typeArticleen_US
dc.identifier.wos000372669800015tr_TR
dc.identifier.scopus2-s2.0-84954447084tr_TR
dc.relation.publicationcategoryMakale - Uluslararası Hakemli Dergitr_TR
dc.contributor.departmentUludağ Üniversitesi/Fen-Edebiyat Fakültesi/Fizik Bölümü.tr_TR
dc.relation.bapHDP(F)-2013/25tr_TR
dc.identifier.startpage214tr_TR
dc.identifier.endpage218tr_TR
dc.identifier.volume11tr_TR
dc.identifier.issue2tr_TR
dc.relation.journalJournal of Nanoelectronics and Optoelectronicsen_US
dc.contributor.buuauthorAsimov, A.-
dc.contributor.buuauthorAhmetoğlu, Muhitdin-
dc.contributor.buuauthorKirsoy, Ahmet-
dc.contributor.buuauthorÖzer, Metin-
dc.contributor.researcheridCBY-1915-2022tr_TR
dc.contributor.researcheridCCC-9142-2022tr_TR
dc.contributor.researcheridFDX-3050-2022tr_TR
dc.contributor.researcheridDLI-3139-2022tr_TR
dc.subject.wosEngineering, electrical & electronicen_US
dc.subject.wosNanoscience & nanotechnologyen_US
dc.subject.wosPhysics, applieden_US
dc.indexed.wosSCIEen_US
dc.indexed.scopusScopusen_US
dc.wos.quartileQ4en_US
dc.contributor.scopusid55849632800tr_TR
dc.contributor.scopusid57060545500tr_TR
dc.contributor.scopusid56716481600tr_TR
dc.contributor.scopusid58389620900tr_TR
dc.subject.scopusSchottky Diodes; Thermionic Emission; Electrical Propertiesen_US
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Web of Science

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