1. Açık Erişim@BUU
  2. İndeksli Yayınlar
  3. Web of Science
Please use this identifier to cite or link to this item: http://hdl.handle.net/11452/33275
Title: The electrical properties of Au/P3HT/n-type Si schottky barrier diode
Authors: Yasin, M.
Uludağ Üniversitesi/Fen-Edebiyat Fakültesi/Fizik Bölümü.
Asimov, A.
Ahmetoğlu, Muhitdin
Kirsoy, Ahmet
Özer, Metin
CBY-1915-2022
CCC-9142-2022
FDX-3050-2022
DLI-3139-2022
55849632800
57060545500
56716481600
58389620900
Keywords: Engineering
Science & technology - other topics
Physics
Schottky barrier diode
Conducting polymers
Ideality factor
P3HT
Series resistance
Interface states
Degradation
Parameters
Frequency
Capacitance
Diodes
Electric resistance
Barrier heights
Current voltage
High frequency capacitance
Ideality factors
Interfacial layer
Schottky diodes
Series resistances
Schottky barrier diodes
Issue Date: 2016
Publisher: American Scientific Publishers
Citation: Asimov, A. vd. (2016). "The electrical properties of Au/P3HT/n-type Si schottky barrier diode". Journal of Nanoelectronics and Optoelectronics, 11(2), 214-218.
Abstract: We investigated the electrical properties of the Au/P3HT/n-Si Schottky diode. The ideality factor n and barrier height Phi(b0) values of the diode were found to be 3.40 and Phi(b0) = 0.71 eV, respectively. n ideality factor greater than unity indicates that the diode exhibits non-ideal current voltage behavior. This behavior results from the effect of series resistance and the presence of an interfacial layer. The values of the ideality factor, series resistance and barrier height obtained from Cheung and Norde method were compared, and it was seen that there was an agreement with each other. We obtained that the high frequency capacitance does not make an important contribution to the total capacitance. Also we have been determined barrier heights increasing with increasing frequency.
URI: https://doi.org/10.1166/jno.2016.1881
http://hdl.handle.net/11452/33275
ISSN: 1555-130X
1555-1318
Appears in Collections:Scopus
Web of Science

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