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http://hdl.handle.net/11452/22708| Title: | Electrical and Schottky contact properties of Pt/n-Si1-XGe/n-Si(100) heterostructure |
| Authors: | Stutzmann, M. Uludağ Üniversitesi/Fen-Edebiyat Fakültesi/Fizik Bölümü. 0000-0002-0781-3376 Ertürk, Kadir Bektöre, Yüksel Hacıismailoğlu, Muhammed Cüneyt K-7950-2012 18036952100 8975743400 8975743500 |
| Keywords: | Engineering Materials science Optics Physics Strain relaxation SI/SIGE Layers Capacitance Current voltage characteristics Electric properties Molecular beam epitaxy Thermal effects Capacitance-voltage (C-V) measurements Schottky barrier heights Schottky contact properties Silicon molecular beam epitaxy (Si-MBE) Silicon compounds |
| Issue Date: | 2005 |
| Publisher: | Wiley-V C H Verlag |
| Citation: | Ertürk, K. vd. (2005). "Electrical and Schottky contact properties of Pt/n-Si1-XGe/n-Si(100) heterostructure". ed. M. Stutzmann. Physica Status Solidi C - Conferences and Critical Reviews, Vol 2, No 4(Physica Status Solidi C-Current Topics in Solid State Physics), 2(4), 1428-1432. |
| Abstract: | We report on n-type (100) oriented Si0.76Ge0.24 samples grown by silicon molecular beam epitaxy (Si-MBE). The grown wafer was, first, cut into small pieces. Some of these pieces were annealed under an inert gas atmosphere at 600 degrees C, 700 degrees C and 800 degrees C for 1 h to induce partial relaxation in Si1-xGex. The formation of Schottky junction was made by Pt deposition on n-Si0.76Ge0.24. The electrical properties of, both, the unannealed and annealed Pt/n-Si0.76Ge0.24/n-Si were studied by current-voltage (I-V) and capacitance-voltage (C-V) measurements. These measurements have been done under different temperatures, and Schottky barrier heights have been determined. Also, these results have been compared with Pt / n-Si. |
| Description: | Bu çalışma, 01-04 Haziran 2005 tarihleri arasında Montpellier’de düzenlenen 7. International Workshop on Expert Evaluation and Control of Compound Semiconductor Materials and Technologies’de bildiri olarak sunulmuştur. |
| URI: | https://doi.org/10.1002/pssc.200460480 https://onlinelibrary.wiley.com/doi/10.1002/pssc.200460480 http://hdl.handle.net/11452/22708 |
| ISSN: | 1610-1634 |
| Appears in Collections: | Scopus Web of Science |
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