1. Açık Erişim@BUU
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Please use this identifier to cite or link to this item: http://hdl.handle.net/11452/25550
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dc.date.accessioned2022-04-05T06:51:45Z-
dc.date.available2022-04-05T06:51:45Z-
dc.date.issued2012-
dc.identifier.citationAhmetoğlu, M. vd. (2012). "Electrical properties of GaAs-GaAlAs near infrared light emitting diodes". Optoelectronics and Advanced Materials-Rapid Communications, 6(9-10), 782-784.en_US
dc.identifier.issn1842-6573-
dc.identifier.issn2065-3824-
dc.identifier.urihttps://oam-rc.inoe.ro/volume/2012/6/9-10/September-October%202012/articles-
dc.identifier.urihttp://hdl.handle.net/11452/25550-
dc.description.abstractThe electrical properties have been studied for GaAs/AlxGa1-xAs based infrared light emitting diode. The characteristics of the device have been analyzed and unusual feature of the device was observed. It operates as avalanche photodiode when it is reverse biased, while it operates as light emitting diode (LED) when it is forward biased.en_US
dc.language.isoenen_US
dc.publisherNatl Inst Optoelectronicsen_US
dc.rightsinfo:eu-repo/semantics/closedAccessen_US
dc.subjectMaterials scienceen_US
dc.subjectOpticsen_US
dc.subjectLight emitting diodeen_US
dc.subjectAvalanche breakdownen_US
dc.subjectI-V characteristicsen_US
dc.subjectAluminum gallium arsenideen_US
dc.subjectDiodesen_US
dc.subjectGallium arsenideen_US
dc.subjectIII-V semiconductorsen_US
dc.subjectInfrared devicesen_US
dc.subjectLight emitting diodesen_US
dc.subjectSemiconducting galliumen_US
dc.subjectInfrared light emitting diodesen_US
dc.subjectIV characteristicsen_US
dc.subjectNear infrared lighten_US
dc.subjectAvalanche diodesen_US
dc.titleElectrical properties of GaAs-GaAlAs near infrared light emitting diodesen_US
dc.typeArticleen_US
dc.identifier.wos000310498100002tr_TR
dc.identifier.scopus2-s2.0-84872239338tr_TR
dc.relation.publicationcategoryMakale - Uluslararası Hakemli Dergitr_TR
dc.contributor.departmentUludağ Üniversitesi/Fen Edebiyat Fakültesi/Fizik Bölümü.tr_TR
dc.contributor.departmentUludağ Üniversitesi/Teknik Bilimler Meslek Yüksekokulu/Mekatronik Programı Bölümü.tr_TR
dc.relation.bap2007/36tr_TR
dc.identifier.startpage782tr_TR
dc.identifier.endpage784tr_TR
dc.identifier.volume6tr_TR
dc.identifier.issue9-10tr_TR
dc.relation.journalOptoelectronics and Advanced Materials-Rapid Communicationsen_US
dc.contributor.buuauthorAhmetoğlu, Muhitdin-
dc.contributor.buuauthorKucur, Banu-
dc.contributor.buuauthorGücüyener, İsmet-
dc.subject.wosMaterials science, multidisciplinaryen_US
dc.subject.wosOpticsen_US
dc.indexed.wosSCIEen_US
dc.indexed.scopusScopusen_US
dc.wos.quartileQ4en_US
dc.contributor.scopusid16021109400tr_TR
dc.contributor.scopusid36903670200tr_TR
dc.contributor.scopusid15834767100tr_TR
dc.subject.scopusLiquid Phase Epitaxy; Photoconductive Cells; Inpen_US
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