Electrical properties of GaAs-GaAlAs near infrared light emitting diodes

Please use this identifier to cite or link to this item: http://hdl.handle.net/11452/25550

Title:	Electrical properties of GaAs-GaAlAs near infrared light emitting diodes
Authors:	Uludağ Üniversitesi/Fen Edebiyat Fakültesi/Fizik Bölümü. Uludağ Üniversitesi/Teknik Bilimler Meslek Yüksekokulu/Mekatronik Programı Bölümü. Ahmetoğlu, Muhitdin Kucur, Banu Gücüyener, İsmet 16021109400 36903670200 15834767100
Keywords:	Materials science Optics Light emitting diode Avalanche breakdown I-V characteristics Aluminum gallium arsenide Diodes Gallium arsenide III-V semiconductors Infrared devices Light emitting diodes Semiconducting gallium Infrared light emitting diodes IV characteristics Near infrared light Avalanche diodes
Issue Date:	2012
Publisher:	Natl Inst Optoelectronics
Citation:	Ahmetoğlu, M. vd. (2012). "Electrical properties of GaAs-GaAlAs near infrared light emitting diodes". Optoelectronics and Advanced Materials-Rapid Communications, 6(9-10), 782-784.
Abstract:	The electrical properties have been studied for GaAs/AlxGa1-xAs based infrared light emitting diode. The characteristics of the device have been analyzed and unusual feature of the device was observed. It operates as avalanche photodiode when it is reverse biased, while it operates as light emitting diode (LED) when it is forward biased.
URI:	https://oam-rc.inoe.ro/volume/2012/6/9-10/September-October%202012/articles http://hdl.handle.net/11452/25550
ISSN:	1842-6573 2065-3824
Appears in Collections:	Scopus Web of Science

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