1. Açık Erişim@BUU
  2. İndeksli Yayınlar
  3. Web of Science
Please use this identifier to cite or link to this item: http://hdl.handle.net/11452/26094
Full metadata record
DC FieldValueLanguage
dc.contributor.authorErtürk, Kadir-
dc.date.accessioned2022-04-26T11:01:30Z-
dc.date.available2022-04-26T11:01:30Z-
dc.date.issued2009-05-
dc.identifier.citationÖzer, M. vd. (2009). "Electrical, structural and morphological properties of Ni/n-Si contacts". Optoelectronics and Advanced Materials, Rapid Communications, 3(5), 506-508.en_US
dc.identifier.issn1842-6573-
dc.identifier.urihttp://hdl.handle.net/11452/26094-
dc.description.abstractThis paper presents structural, morphological and electrical properties of Ni/n-Si contacts formed by electro-deposition technique. Ni film is deposited on n-type Si (100) substrate using 2 mol/L Nickel Sulphamate, 0.5 mol/L Boric Acid solutions. The morphological properties are investigated by using energy dispersive X-Ray analysis and scanning electron microscopy imaging to perform local distribution of Ni. Electrical measurements have been done at room temperature to investigate the Schottky barrier height.en_US
dc.language.isoenen_US
dc.publisherNatl Inst Optoelectronicsen_US
dc.rightsinfo:eu-repo/semantics/closedAccessen_US
dc.subjectElectro-depositionen_US
dc.subjectMorphological propertiesen_US
dc.subjectScanning electron microscopyen_US
dc.subjectSchottky barrier heighten_US
dc.subjectHydrogenen_US
dc.subjectMaterials scienceen_US
dc.subjectOpticsen_US
dc.subjectBoric aciden_US
dc.subjectDepositionen_US
dc.subjectEnergy dispersive X ray analysisen_US
dc.subjectScanning electron microscopyen_US
dc.subjectSchottky barrier diodesen_US
dc.subjectSemiconductor metal boundariesen_US
dc.subjectSiliconen_US
dc.subjectX ray diffraction analysisen_US
dc.subjectBoric acid solutionsen_US
dc.subjectElectrical measurementen_US
dc.subjectLocal distributionsen_US
dc.subjectMorphological propertiesen_US
dc.subjectNickel sulphamateen_US
dc.subjectSchottky barrier heightsen_US
dc.subjectSi (100) substrateen_US
dc.subjectStructural and morphological propertiesen_US
dc.subjectNickel metallographyen_US
dc.titleElectrical, structural and morphological properties of Ni/n-Si contactsen_US
dc.typeArticleen_US
dc.identifier.wos000268622300025tr_TR
dc.identifier.scopus2-s2.0-77951992309tr_TR
dc.relation.publicationcategoryMakale - Uluslararası Hakemli Dergitr_TR
dc.contributor.departmentUludağ Üniversitesi/Fen-Edebiyat Fakültesi/Fizik Bölümü.tr_TR
dc.relation.bap2005/4tr_TR
dc.identifier.startpage506tr_TR
dc.identifier.endpage508tr_TR
dc.identifier.volume3tr_TR
dc.identifier.issue5tr_TR
dc.relation.journalOptoelectronics and Advanced Materials, Rapid Communicationsen_US
dc.contributor.buuauthorÖzer, Mehmet-
dc.contributor.buuauthorAkay, Sertan Kemal-
dc.contributor.buuauthorPeksöz, Ahmet-
dc.contributor.buuauthorKaynak, Gökay-
dc.contributor.researcheridR-7260-2016tr_TR
dc.contributor.researcheridAAG-9772-2021tr_TR
dc.relation.collaborationYurt içitr_TR
dc.subject.wosMaterials science, multidisciplinaryen_US
dc.subject.wosOpticsen_US
dc.indexed.wosSCIEen_US
dc.indexed.scopusScopusen_US
dc.wos.quartileQ4en_US
dc.contributor.scopusid9742545600tr_TR
dc.contributor.scopusid24801954600tr_TR
dc.contributor.scopusid23100976500tr_TR
dc.contributor.scopusid12042075600tr_TR
dc.subject.scopusCatalysis; Born-Oppenheimer Approximation; Molecular Relaxationen_US
Appears in Collections:Scopus
Web of Science

Files in This Item:
There are no files associated with this item.
Show simple item record


Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.