1. Açık Erişim@BUU
  2. İndeksli Yayınlar
  3. Web of Science
Please use this identifier to cite or link to this item: http://hdl.handle.net/11452/26094
Title: Electrical, structural and morphological properties of Ni/n-Si contacts
Authors: Ertürk, Kadir
Uludağ Üniversitesi/Fen-Edebiyat Fakültesi/Fizik Bölümü.
Özer, Mehmet
Akay, Sertan Kemal
Peksöz, Ahmet
Kaynak, Gökay
R-7260-2016
AAG-9772-2021
9742545600
24801954600
23100976500
12042075600
Keywords: Electro-deposition
Morphological properties
Scanning electron microscopy
Schottky barrier height
Hydrogen
Materials science
Optics
Boric acid
Deposition
Energy dispersive X ray analysis
Scanning electron microscopy
Schottky barrier diodes
Semiconductor metal boundaries
Silicon
X ray diffraction analysis
Boric acid solutions
Electrical measurement
Local distributions
Morphological properties
Nickel sulphamate
Schottky barrier heights
Si (100) substrate
Structural and morphological properties
Nickel metallography
Issue Date: May-2009
Publisher: Natl Inst Optoelectronics
Citation: Özer, M. vd. (2009). "Electrical, structural and morphological properties of Ni/n-Si contacts". Optoelectronics and Advanced Materials, Rapid Communications, 3(5), 506-508.
Abstract: This paper presents structural, morphological and electrical properties of Ni/n-Si contacts formed by electro-deposition technique. Ni film is deposited on n-type Si (100) substrate using 2 mol/L Nickel Sulphamate, 0.5 mol/L Boric Acid solutions. The morphological properties are investigated by using energy dispersive X-Ray analysis and scanning electron microscopy imaging to perform local distribution of Ni. Electrical measurements have been done at room temperature to investigate the Schottky barrier height.
URI: http://hdl.handle.net/11452/26094
ISSN: 1842-6573
Appears in Collections:Scopus
Web of Science

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