Please use this identifier to cite or link to this item: http://hdl.handle.net/11452/26650
Title: Electrical properties of poly(ethylene glycol dimethacrylate-n-vinyl imidazole)/single walled carbon nanotubes/n-Si schottky diodes formed by surface polymerization of single walled carbon nanotubes
Authors: Tekin, Nalan
Beyaz, Saadet
Koçkar, Hakan
Uludağ Üniversitesi/Fen-Edebiyat Fakültesi/Fizik Bölümü.
Uludağ Üniversitesi/Fen-Edebiyat Fakültesi/Kimya Bölümü.
Ahmetoğlu, Muhitdin
Kara, Ali
AAG-6271-2019
16021109400
7102824859
Keywords: Materials science
Physics
Metal semiconductor-structure
Schottky barrier
Single walled carbon nanotube
N-vinyl imidazole
Adsorption
Bias voltage
Capacitance
Carbon
Current voltage characteristics
Diodes
Ethylene
Ethylene glycol
Leakage currents
Polymerization
Schottky barrier diodes
Semiconducting silicon
Semiconducting silicon compounds
Semiconductor diodes
Silicon
Barrier heights
Capacitance voltage characteristic
Capacitance voltage measurements
Current voltage
Cvd method
Electrical characteristic
Electrical measurement
Ideality factors
Impurity density
N-vinyl imidazole
Reverse-bias
Room temperature
Schottky barriers
Schottky diodes
Single-walled carbon
Surface polymerization
Single-walled carbon nanotubes (swcn)
Issue Date: 1-Jan-2012
Publisher: Elsevier Science
Citation: Ahmetoğlu, M. vd. (2012). "Electrical properties of poly(ethylene glycol dimethacrylate-n-vinyl imidazole)/single walled carbon nanotubes/n-Si schottky diodes formed by surface polymerization of single walled carbon nanotubes". Thin Solid Films, 520(6), 2106-2109.
Abstract: In this paper we report the electrical characteristics of the Schottky diodes formed by surface polymerization of the Poly(ethylene glycol dimethanylate-n-vinyl imidazole)/Single Walled Carbon Nanotubes on n-Si The Single Walled Carbon Nanotubes were synthesized by CVD method. The main electrical properties of the Poly(ethylene glycol dimethanylate-n-vinyl imidazole)/Single Walled Carbon Nanotubes/n-Si have been investigated through the barrier heights, the ideality factors and the impurity density distribution, by using current-voltage and reverse bias capacitance voltage characteristics. Electrical measurements were carried out at room temperature. Poly(ethylene glycol dimethacrylate-n-vinyl imidazole)/Single Walled Carbon Nanotubes/n-Si Schottky diode current-voltage characteristics display low reverse-bias leakage currents and average barrier heights of 0.61 +/- 0.02 eV and 0.72 +/- 0.02 eV obtained from both current-voltage and capacitance-voltage measurements at room temperature, respectively.
URI: https://doi.org/10.1016/j.tsf.2011.08.066
https://www.sciencedirect.com/science/article/pii/S0040609011015707
http://hdl.handle.net/11452/26650
ISSN: 0040-6090
Appears in Collections:Scopus
Web of Science

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