Bursa Uludağ Üniversitesi Açık Erişim Sistemi
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http://hdl.handle.net/11452/26650| Başlık: | Electrical properties of poly(ethylene glycol dimethacrylate-n-vinyl imidazole)/single walled carbon nanotubes/n-Si schottky diodes formed by surface polymerization of single walled carbon nanotubes |
| Yazarlar: | Tekin, Nalan Beyaz, Saadet Koçkar, Hakan Uludağ Üniversitesi/Fen-Edebiyat Fakültesi/Fizik Bölümü. Uludağ Üniversitesi/Fen-Edebiyat Fakültesi/Kimya Bölümü. Ahmetoğlu, Muhitdin Kara, Ali AAG-6271-2019 16021109400 7102824859 |
| Anahtar kelimeler: | Materials science Physics Metal semiconductor-structure Schottky barrier Single walled carbon nanotube N-vinyl imidazole Adsorption Bias voltage Capacitance Carbon Current voltage characteristics Diodes Ethylene Ethylene glycol Leakage currents Polymerization Schottky barrier diodes Semiconducting silicon Semiconducting silicon compounds Semiconductor diodes Silicon Barrier heights Capacitance voltage characteristic Capacitance voltage measurements Current voltage Cvd method Electrical characteristic Electrical measurement Ideality factors Impurity density N-vinyl imidazole Reverse-bias Room temperature Schottky barriers Schottky diodes Single-walled carbon Surface polymerization Single-walled carbon nanotubes (swcn) |
| Yayın Tarihi: | 1-Oca-2012 |
| Yayıncı: | Elsevier Science |
| Atıf: | Ahmetoğlu, M. vd. (2012). "Electrical properties of poly(ethylene glycol dimethacrylate-n-vinyl imidazole)/single walled carbon nanotubes/n-Si schottky diodes formed by surface polymerization of single walled carbon nanotubes". Thin Solid Films, 520(6), 2106-2109. |
| Özet: | In this paper we report the electrical characteristics of the Schottky diodes formed by surface polymerization of the Poly(ethylene glycol dimethanylate-n-vinyl imidazole)/Single Walled Carbon Nanotubes on n-Si The Single Walled Carbon Nanotubes were synthesized by CVD method. The main electrical properties of the Poly(ethylene glycol dimethanylate-n-vinyl imidazole)/Single Walled Carbon Nanotubes/n-Si have been investigated through the barrier heights, the ideality factors and the impurity density distribution, by using current-voltage and reverse bias capacitance voltage characteristics. Electrical measurements were carried out at room temperature. Poly(ethylene glycol dimethacrylate-n-vinyl imidazole)/Single Walled Carbon Nanotubes/n-Si Schottky diode current-voltage characteristics display low reverse-bias leakage currents and average barrier heights of 0.61 +/- 0.02 eV and 0.72 +/- 0.02 eV obtained from both current-voltage and capacitance-voltage measurements at room temperature, respectively. |
| URI: | https://doi.org/10.1016/j.tsf.2011.08.066 https://www.sciencedirect.com/science/article/pii/S0040609011015707 http://hdl.handle.net/11452/26650 |
| ISSN: | 0040-6090 |
| Koleksiyonlarda Görünür: | Scopus Web of Science |
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