Please use this identifier to cite or link to this item: http://hdl.handle.net/11452/28854
Title: Simulation of displacement damage for silicon avalanche photo-diodes
Authors: Uludağ Üniversitesi/Fen-Edebiyat Fakültesi/Fizik Anabilim Dalı.
Kılıç, Adnan
Piliçer, Ercan
Tapan, İlhan
Özmutlu, Emin N.
AAH-8769-2021
57210230921
15843878300
54396260200
6507726213
Keywords: Instruments & instrumentation
Nuclear science & technology
Physics
Radiation damage
Avalanche photo-diode
Geant4 simulation
Photodiodes
Detectors
Niel
Diodes
Electric properties
Electron energy loss spectroscopy
Energy dissipation
High energy physics
Neutrons
Radiation damage
Radiation detectors
Semiconducting silicon compounds
Silicon detectors
Barrel electromagnetic calorimeters
Displacement damages
Energy loss
GEANT4 simulation
Geant4 toolkits
Neutron fluences
Silicon avalanche
Avalanche diodes
Issue Date: 1-Nov-2011
Publisher: Elsevier
Citation: Kılıç, A. vd. (2011). "Simulation of displacement damage for silicon avalanche photo-diodes". Nuclear Instruments & Methods in Physics Research Section A-Accelerators Spectrometers Detectors and Associated Equipment, 658(1), 70-72.
Abstract: The silicon avalanche photo-diodes (APDs) in the CMS barrel electromagnetic calorimeter will be exposed to an integrated neutron fluence of about 2 x 10(13) n/cm(2) over 10 years of operation. High neutron fluences change the electrical properties of silicon detectors. The changes are proportional to the non-ionising energy loss in the APDs. Using the Geant4 toolkit, we have calculated the non-ionising energy loss as well as the rate of generation of primary defects in the APDs, for the expected neutron fluence.
Description: Bu çalışma, 12-15 Ekim 2010 tarihleri arasında Florence[İtalya]’da düzenlenen International Conference on Radiation Effects on Semiconductor Materials, Detectors and Devices (RESMDD)’da bildiri olarak sunulmuştur.
URI: https://doi.org/10.1016/j.nima.2011.05.073
https://www.sciencedirect.com/science/article/pii/S0168900211010801
http://hdl.handle.net/11452/28854
ISSN: 0168-9002
1872-9576
Appears in Collections:Scopus
Web of Science

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