Bursa Uludağ Üniversitesi Açık Erişim Sistemi
Bursa Uludağ Üniversitesinin araştırma çıktılarının yer aldığı açık erişim sistemidir.
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http://hdl.handle.net/11452/29321| Başlık: | Investigation of RadFET response to X-ray and electron beams |
| Yazarlar: | Yılmaz, E. McGarrigle, A. M. Vasovic, N. Yeğen, Dinçer Jaksic, Aleksandar Uludağ Üniversitesi/Fen-Edebiyet Fakültesi/Fizik Bölümü. 0000-0002-1836-7033 Kahraman, Ayşegül AAH-6441-2021 47161190600 |
| Anahtar kelimeler: | Chemistry Nuclear science & technology Radiology, nuclear medicine & medical imaging Oxide traps Irradiation Sensitivity Charge Bias Electric fields Electron beams Irradiation Linear accelerators MOS devices Radiation Threshold voltage Electric field screening Fading characteristics High energy X ray Oxide trapped charge Radiation response Radiation-induced Radiation-sensing Switching trap (STs) Field effect transistors |
| Yayın Tarihi: | 8-Haz-2017 |
| Yayıncı: | Elsevier |
| Atıf: | Yılmaz, E. vd. (2017). ''Investigation of RadFET response to X-ray and electron beams''. Applied Radiation and Isotopes, 127, 156-160. |
| Özet: | The irradiation response of Radiation Sensing Field Effect Transistor (RadFET), also known as MOSFET/pMOS dosimeter, to high energy X-rays and electron beams was investigated. The threshold voltages before and after irradiation were measured and the trap densities in the gate oxide and oxide/silicon interface of the RadFETs are evaluated. The RadFETs were irradiated with 6 MV X-rays, and 10 and 18 MeV electron beams emitted from a Linear accelerator (LINAC). Linear and non-linear fits to experimental results showed that after an initial linear response up to several Gy, deviation from the linearity occurred due to electric field screening by the radiation induced oxide trapped charges. The radiation-induced fixed traps (FTs) and switching traps (STs) were analysed and the FT density was found to be higher than the ST density for all beam types and doses. The radiation response, fading characteristics, and variation of the trapped charges of the RadFETs showed similar behaviour in tests. |
| URI: | https://doi.org/10.1016/j.apradiso.2017.06.004 https://www.sciencedirect.com/science/article/pii/S0969804316304122 http://hdl.handle.net/11452/29321 |
| ISSN: | 0969-8043 |
| Koleksiyonlarda Görünür: | Scopus Web of Science |
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